招待講演 Electron devices based on GaN and related nitride semiconductors (Silicon devices and materials)
スポンサーリンク
概要
- 論文の詳細を見る
State-of-the-art performance and future perspectives of III-nitride high-voltage and high-power transistors have been described. The importance of field plate design for achieving optimum high breakdown voltages is discussed based on a two-dimensional numerical device simulation, taking material parameters of the insulating film into account. Simulation results also indicated that an InN or In-rich InGaN channel FET is extremely promising for THz frequency operation. Novel III-nitride heterostructures, such as AlInN/InN/AlInN and AlInN/InGaN/AlInN fabricated on non-polar substrates, will provide additional freedom in designing a new device structure that ensures both high current drive capability and high-frequency performance. We predict that millimeter-wave high-power transistors operated at over 60GHz will become more important to establish safe and sustainable society in the future.
- 2009-06-17
著者
関連論文
- Optimum Rapid Thermal Activation for Mg-doped p-type GaN
- 招待講演 Electron devices based on GaN and related nitride semiconductors (Silicon devices and materials)
- 招待講演 Electron devices based on GaN and related nitride semiconductors (Electron devices)
- Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
- Simulation of tunneling contact resistivity in non-polar AlGaN/GaN heterostructures(Session9B: GaN and SiC Device Process Technology)
- Simulation of tunneling contact resistivity in non-polar AlGaN/GaN heterostructures(Session9B: GaN and SiC Device Process Technology)
- Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
- Optimum Rapid Thermal Activation of Mg-Doped p-Type GaN
- Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
- Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
- Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs (レーザ・量子エレクトロニクス)