Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
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概要
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Ve have evaluated the tunneling contact resistivity based on numerical calculation of tunneling current density across an AlGaN barrier layer in non-polar AlGaN/GaN heterostructures. In order to reduce the tunneling contact resistivity, we have introduced an n^+-Al_XGa_<1-X>N layer between an n^+-GaN cap layer and an i-AlGaN barrier layer. The tunneling contact resistivity has been optimized by varying Al composition and donor concentration in n^+-Al_XGa_<1-X>N. Simulation results show that the tunneling contact resistivity can be improved by as large as 4 orders of magnitude, compared to the standard AlGaN/GaN heterostructure.
- 社団法人 電子情報通信学会の論文
- 2009-05-01
著者
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Shiojima Kenji
Graduate School Of Engineering University Of Fukui
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Kuzuhara Masaaki
Graduate School Of Engineering University Of Fukui
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CHIKAOKA Hironari
Graduate School of Engineering, University of Fukui
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TAKAKUWA Yoichi
Graduate School of Engineering, University of Fukui
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Takakuwa Youichi
Graduate School Of Engineering University Of Fukui
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Chikaoka Hironari
Graduate School Of Engineering University Of Fukui
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