Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack

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概要

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• An AlxGa1-xN/AlyGa1-yN high-electron-mobility transistor (HEMT) with AlGaN as a channel layer has been fabricated on a sapphire substrate for high-output-power and high-frequency electronic applications. One of the key process steps for the AlGaN-channel HEMT is to ensure low resistivity for source/drain ohmic contacts. In this work, the electrical characteristics of Zr/Al/Mo/Au ohmic contacts for AlGaN-channel HEMTs were investigated at annealing temperatures from 850 to 1000 °C. An AlGaN-channel HEMT was fabricated with Al contents of 0.3 and 0.55 for the channel and barrier layer, respectively. A minimum ohmic contact resistivity of 2.6\times 10^{-4} \Omega cm2 was achieved for the Al0.55Ga0.45N/Al0.3Ga0.7N heterostructure after annealing at 950 °C.

• 2011-10-25

著者

• Kuzuhara Masaaki

  Graduate School Of Engineering University Of Fukui

• Akita Katsushi

  Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan

• Hashimoto Shin

  Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan

• Yafune Norimasa

  Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

• Kuzuhara Masaaki

  Graduate School of Engineering, University of Fukui, Fukui 910-8507, Japan

• Yamamoto Yoshiyuki

  Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan

• YAFUNE Norimasa

  Sharp Corporation

• HASHIMOTO Shin

  Sumitomo Electric Industries, Ltd.

• YAMAMOTO Yoshiyuki

  Sumitomo Electric Industries, Ltd.

関連論文

• Optimum Rapid Thermal Activation for Mg-doped p-type GaN
• 招待講演 Electron devices based on GaN and related nitride semiconductors (Silicon devices and materials)
• 招待講演 Electron devices based on GaN and related nitride semiconductors (Electron devices)
• High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
• Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
• Simulation of tunneling contact resistivity in non-polar AlGaN/GaN heterostructures(Session9B: GaN and SiC Device Process Technology)
• Simulation of tunneling contact resistivity in non-polar AlGaN/GaN heterostructures(Session9B: GaN and SiC Device Process Technology)
• Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures
• Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
• High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
• Optimum Rapid Thermal Activation of Mg-Doped p-Type GaN
• Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
• Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
• Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
• Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
• Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs (レーザ・量子エレクトロニクス)

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