Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
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概要
- 論文の詳細を見る
AlGaN/GaN HEMTs with different passivation layers were studied using pulsed I-V system. The maximum drain current showed higher values at pulsed conditions as compared with DC for SiN passivation, and vice versa for Al_2O_3, SiO_2 and without passivation. The drain current decreased with increasing the on-state time for SiN, which indicated that the most probable location of trap was at the AlGaN layer beneath the gate. Increasing tendency of drain current with increasing on-state time indicated that the surface traps were dominant for this behavior, which was the case for Al_2O_3, SiO_2, and without passivation.
- 一般社団法人電子情報通信学会の論文
- 2012-11-22
著者
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Kuzuhara Masaaki
Graduate School Of Engineering University Of Fukui
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Tokuda Hirokuni
Department Of Electrical And Electronics Engineering University Of Fukui
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HASAN Md.
Graduate School of Engineering, University of Fukui
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TOKUDA Hirokuni
Graduate School of Engineering, University of Fukui
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- Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
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