Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
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概要
- 論文の詳細を見る
- 2011-11-10
著者
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KUZUHARA Masaaki
Department of Electrical and Electronics Engineering, University of Fukui
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Kuzuhara Masaaki
Department Of Electrical And Electronics Engineering University Of Fukui
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Tokuda Hirokuni
Department Of Electrical And Electronics Engineering University Of Fukui
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HASAN Md.
Department of Electrical and Electronics Engineering, University of Fukui
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Hasan Md.
Department Of Electrical And Electronics Engineering University Of Fukui
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TOKUDA Hirokuni
Department of Electrical and Electronics Engineering, University of Fukui
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- lnGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (レーザ・量子エレクトロニクス)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子デバイス)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子部品・材料)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
- Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
- Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs (レーザ・量子エレクトロニクス)