Theoretical Analysis of Breakdown Characteristics for Recessed Gate GaAs MESFETs
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Kuzuhara Masaaki
Department Of Electrical And Electronics Engineering University Of Fukui
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SHUGO Takashi
Department of Electrical and Electronics Engineering University of Fukui
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MACARAMBON JR.
Department of Electrical and Electronics Engineering University of Fukui
関連論文
- Direct Calculation of Source Parasitic Resistance in AlGaAs/GaAs HEMTs
- Properties of Zn-Doped P-Type In_Ga_As on InP Substrate
- Theoretical Analysis of Breakdown Characteristics for Recessed Gate GaAs MESFETs
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- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子部品・材料)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures