Special section on fundamentals and applications of advanced semiconductor devices

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概要

• 論文の詳細を見る
• The Institute of Electronics, Information and Communication Engineersの論文
• 2008-05-01

著者

• Kuzuhara Masaaki

  Department Of Electrical And Electronics Engineering University Of Fukui

関連論文

• Direct Calculation of Source Parasitic Resistance in AlGaAs/GaAs HEMTs
• Properties of Zn-Doped P-Type In_Ga_As on InP Substrate
• Theoretical Analysis of Breakdown Characteristics for Recessed Gate GaAs MESFETs
• Special section on fundamentals and applications of advanced semiconductor devices
• lnGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
• Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (レーザ・量子エレクトロニクス)
• Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子デバイス)
• Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子部品・材料)
• Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
• Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
• Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures

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