Properties of Zn-Doped P-Type In_<0.53>Ga_<0.47>As on InP Substrate
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概要
- 論文の詳細を見る
Zn-doping in In_<0.53>Ga_<0.47>As was investigated. The dependence of the resistivity and Hall mobility of Zn-doped In_<0.53>Ga_<0.47>As upon the hole concentration is found to be the same as that of Zn-doped In_<0.15>Ga_<0.85>As. Photoluminescence in Zn-doped In_<0.53>Ga_<0.47>As is investigated in relation to hole concentration. In_<0.53>Ga_<0.47>As homojunction diodes are made, and minoritycarrier diffusion lengths of holes and electrons are derived from the EBIC (electron beaminduced current) intensity which is dependent upon the distance from the junction interface.
- 社団法人応用物理学会の論文
- 1980-05-05
著者
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Takeda Yoshikazu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Kuzuhara Masaaki
Department Of Electrical And Electronics Engineering University Of Fukui
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Kuzuhara Masaaki
Department Of Electrical Engineering Kyoto University
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Sasaki Akio
Department Of Electrical Engineering Kyoto University
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