lnGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
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概要
- 論文の詳細を見る
A very high optical gain (sim 900) was obtained near the 1.1-μm wavelength by the InGaAsP-InP heterojunction phototransitor. The light amplifier, which is an integral device of a heterojunction phototransistor and a double-heterojunction laser (or light-emitting diode with confining layers), is presented. The optical bias method is described for the amplification of a weak incident light.
- 社団法人応用物理学会の論文
- 1981-04-05
著者
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Kuzuhara Masaaki
Department Of Electrical And Electronics Engineering University Of Fukui
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Sasaki Akio
Department Of Electrical Engineering Kyoto University
関連論文
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