Optical Flip-Flop and Astable Multivibrator Functions by Vertical and Direct Integration of Heterojunction Phototransistors and Laser Diodes
スポンサーリンク
概要
- 論文の詳細を見る
- 1994-12-01
著者
-
Noda Susumu
Department Of Electrical Engineering Kyoto University
-
Sasaki Akio
Department Of Electrical Engineering Kyoto University
-
Shibata Kimitaka
Department Of Electrical Engineering Kyoto University
-
Katamata Takahiro
Department Of Electrical Engineering Kyoto University
-
MAEHORI Kenta
Department of Electrical Engineering, Kyoto University
-
Maehori Kenta
Department Of Electrical Engineering Kyoto University
-
Noda Susumu
Department of Electric Science and Engineering, Kyoto University
関連論文
- Cd-Doping in In_xGa_As_yP_ Mixed Semiconductors Grown by Liquid-Phase Epitaxy
- Structural Characterization of AlP/GaP Disordered Superlattice by Dynamical Simulation of X-Ray Diffraction
- Characteristics of Gaseous and Liquid Fuel Combustion in Laboratory-scale Furnaces
- Green Photoluminescence from GaInN Photonic Crystals
- Electroluminescence of AlAs/GaAs Disordered Superlattices
- Photoluminescent Properties of AlAs/Al_xGa_As (x=0.5) Disordered Superlattices
- Absorption Spectra and Photoluminescent Processes of AlAs/GaAs Disordered Superlattices
- Proposal and Experimental Results of Disordered Crystalline Semiconductors
- Al_xGa_As Heterojunction Phototransistors Responding to Entire Visible Wavelength Region
- OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source
- Characterization of InP Grown by OMVPE Using Tertiary-butylphosphine for the Phosphorous Source
- Determination of Al Composition and DLTS Measurements of Al_xGa_Sb on GaSb Substrate
- New Realization Method for Three-Dimensional Photonic Crystal in the Optical Wavelength Region: Experimental Consideration
- New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region : Experimental Consideration
- New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region
- Plasma-Deposited Silicon Nitride Films from SiF_2 as Silicon Source
- Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride
- Growth Temperature Dependence of Electrical Properties of LPE-Al_Ga_Sb Characterized by p-n Junction Current Transport
- Direct Fabrication of Photonic Crystal on Glass Substrate by Nanoimprint Lithography
- Optical and Electrical Characteristics of Organic Light-Emitting Diodes with Two-Dimensional Photonic Crystals in Organic/Electrode Layers
- Properties of Chemically Vapor-Deposited Amorphous SiN_x Alloys
- Effects of Nitrogen Incorporation on Gap-State Density in Chemically Vapor-Deposited Amorphous Silicon
- AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and their Photoluminescence Properties : Semiconductors and Semiconductor Devices
- Predicted Extremely High Mobilities of Two-Dimensional Electrons in AlGaSb/GaSb and AlInAsSb/InAs Single Heterostructures
- Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic Source : Condensed Matter
- Electrical and Optical Properties of Ag/p-InP/p-InGaAs Schottky Photodiodes
- Fabrication of 1-μm Wavelength Region Ag/p-InP/p-InGaAs Schottky Photodiodes by LPE and Selective Etching
- Calculated Electron Mobility of Two-Dimensional Electrons in AIInAs/InGaAs and InP/InGaAs Single Heterostructures
- Enhancement of Absorption Magnitude of Short-Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells
- Nearinfrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
- Photoluminescence and Photoluminescence Excitation Spectra of AlAs/GaAs Disordered Superlattices with Various Disordered Lengths
- Analysis of Waveguides and Waveguide Bends in Photonic Crystal Slabs with Triangular Lattice
- Design for Waveguides in Three-Dimensional Photonic Crystals
- Wafer Fusion Technique Applied to GaN/GaN System
- Development of One Period of a Three-Dimensional Photonic Crystal in the 5-0μm Wavelength Region by Wafer Fusion and Laser Beam Diffraction Pattern Observation Techniques
- Fabrication and Optical Properties of One Period of a Three-Dimensional Photonic Crystal Operating in the 5-10 μm Wavelength Region
- GaP, AlGaAs/GaAs, AlGaAsSb/GaSb Photovoltaic Devices and Characteristics : II-1: COMPOUND SOLAR CELLS
- Wafer Fusion Condition for GaAs/AlGaAs System and Its Application to Laser Diode : Instrumentation, Measurement, and Fabrication Technology
- Photonic Crystal Lasers
- Linearly-Polarized Single-Lobed Beam in a Surface-Emitting Photonic-Crystal Laser
- Low NO_x Combustion by a Cyclone-Jet Combustor
- On-the-Fly Wavelength Conversion of Photons by Dynamic Control of Photonic Waveguides
- Monolithic Integrated Device for Light Amplification : B-3: NOVEL DEVICES
- Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor
- Average Bond Lengths and Atom Arrangement in In_Ga_xAs and GaAs_P_x III-V Ternary Alloy Semiconductors
- Alloy Scattering Mobility in III-V Ternary Alloy Semiconductors with Nonrandom Atom Arrangerment
- Optical Flip-Flop and Astable Multivibrator Functions by Vertical and Direct Integration of Heterojunction Phototransistors and Laser Diodes
- Band structure observation of 2D photonic crystal with various V-shaped air-hole arrangements
- Fabrication of Indium Phosphide Compound Photonic Crystal by Hydrogen Iodide/Xenon Inductively Coupled Plasma Etching
- Finite-Difference Time-Domain Simulation of Two-Dimensional Photonic Crystal Surface-Emitting Laser Having a Square-Lattice Slab Structure(Photonic Crystals and Their Device Applications)
- Temperature Dependence of Charge Transfer in Metal-Nitride-Semiconductor Diode Structure
- Deep Trap States in Si_3N_4 Layer on Si Substrate
- Free Energies and Equilibrium States of Mono- and Bi-Layer Superstructures of III-V Ternary Alloy Semiconductors
- Solution Hardening due to a Nonrandom Atom Arrangement in III-V Ternary Alloy Semiconductors : Mechanical and Acoustical Properties
- Bond Lengths in III-V Ternary Alloy Semiconductors
- Effects of Magnetic Field on Electron Transfer and Velocity-Field Characteristic in Gallium Arsenide
- Structural and Electrical Characterization of InP Air/Semiconductor Gratings Formed by Mass-Transport Assisted Wafer Fusion Technique
- Growth of ZnS by Metalorganic Chemical Vapor Deposition
- Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPE
- Atom Arrangement in III-V Quaternary Alloy Semiconductors of (ABC)D Type : Semiconductors and Semiconductor Devices
- Average Lengths and Statistics of Bonds in In_Ga_xAs_P_y Quaternary Alloy Semiconductor : Semiconductors and Semiconductor Devices
- TED-AJ03-528 IDENTIFICATION OF TRIPLE FLAME BASED ON NUMERICAL DATA FOR LAMINAR LIFTED FLAMES
- Liquid-Crystal Electrothermo-Optic Effects and Their Application to Display : B-3: DISLLAY DEVICES
- Highly Confined Three-Dimensional Photonic Crystal Waveguide with Sharp Bend
- Identification of Triple Flame Based on Numerical Data for Laminar Lifted Flames
- Properties of Zn-Doped P-Type In_Ga_As on InP Substrate
- Composition and Chemical Bonds in Silicon Nitride by SiH_4-N_2 Gas Mixture Plasma CVD
- B313 NUMERICAL SIMULATION OF A TURBULENT JET NON-PREMIXED FLAME BY A SACALAR PDF APPROACH(Turbulent flame-3)
- Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
- Nonpremixed Flamelet Statistics at Flame Base of Lifted Turbulent Jet Nonpremixed Flames(Experimental Mechanics in Heat and Fluid Flow)
- Highly Effective In-Plane Channel-Drop Filters in Two-Dimensional Heterostructure Photonic-Crystal Slab
- Characterization of InP Air/Semiconductor Gratings Formed by Mass-Transport Assisted Wafer Fusion Technique and Its Application to Distributed Feedback Laser
- lnGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
- Relaxation Time of Short Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells
- Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening
- 2-D Simulation and New Structures of Heterojunction Phototransistor for Higher Optical Amplification in Optoelectronic Integrated Devices
- An Experimental Study of Flame Characteristics of Jet Diffusion Flames in Cylindrical Furnaces : (2nd Report, Scaling of EINOx)
- [Invited]Photonic Crystal Lasers
- Numerical Investigation of Edge Flame Structure of Counterflow Nonpremixed Flames with Local Extinction Due to Flame Stretch
- 100-nm-Scale Alignment using Laser Beam Diffraction Pattern Observation Techniques and Wafer Fusion for Realizing Three-Dimensional Photonic Crystal Structure
- Effect of Flow Field on NOx Emission Properties of Jet Nonpremixed Flames in Cylindrical Furnaces
- Numerical Evaluation of the Effect of Global Equivalence Ratio on Confined Turbulent Non-Premixed Flames
- NOx Reduction of Non-Premixed Flames by Combination of Burner and Furnaces
- Air-Hole Retained Growth by Molecular Beam Epitaxy for Fabricating GaAs-Based Photonic-Crystal Lasers
- Enhancement of Absorption Magnitude of Short-Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells
- Direct Fabrication of Photonic Crystal on Glass Substrate by Nanoimprint Lithography
- Near-infrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate