Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
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概要
- 論文の詳細を見る
Variations in energy gap, band structure, and relative dielectric constants were examined in 18 ternary and 15 quaternary III-V mixed semiconductor materials for optical devices. A semiconductor laser constructed with AlGaSb/AlGaAsSb on GaSb emitting a wavelength in the range from 1.3 to 1.7μm is described. Uniform layers of mixed semiconductors, AlGaSb and AlGaAsSb, were successfully grown on a (111)B-oriented GaSb substrate. Lasing oscillation near 1.2μm was observed at 77 K, slightly beyond 4.0 kA/cm^2, in a hetero-isolation stripe laser with an active layer 1.6μm thick.
- 社団法人応用物理学会の論文
- 1980-09-05
著者
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Takeda Yoshikazu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
-
Sasaki Akio
Department Of Electrical Engineering Kyoto University
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NISHIUMA Masahiro
Department of Electrical Engineering, Kyoto University
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Nishiuma Masahiro
Department Of Electrical Engineering Kyoto University
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