Observation of Electric Fields at Surface and Interface of Doped GaAs/Semi-insulating GaAs Structures by Fast Fourier Transformed Photoreflectance
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-11-15
著者
-
Takeda Yoshikazu
Department Of Electrical Engineering Kyoto University:(present Address) Department Of Materials Nago
-
Takeda Yoshikazu
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
-
Takeda Yoshikazu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
-
FUJIWARA Yasufumi
Department of Materials Science and Engineering, Nagoya University
-
NUKEAW Jiti
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
-
Nukeaw Jiti
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
-
Fujiwara Yasufumi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
関連論文
- Super-High Brightness and High-Spin-Polarization Photocathode
- Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy
- Effect of Ln-Site Disorder on T_c of Oxypnictide Superconductor LnFeAsO_F_x (Ln = Nd, Ce-Gd, and La-Dy)
- Nanoscale ErP Islands on InP(001) Substrate Grown by Organometallic Vapor-Phase Epitaxy
- Thermal Quenching of Er-Related Luminescence in GaInP Doped with Er by Organometallic Vapor Phase Epitaxy
- Formation of ErP Islands on InP(001) Surface by Organometallic Vapor Phase Epitaxy
- Effects of Growth Temperature on Er-Related Photoluminescence in Er-Doped InP and GaAs Grown by Organometallic Vapor Phase Epitaxy with Tertiarybutylphosphine and Tertiarybutylarsine
- Droplet Hetero-Epitaxy of InAs Quantum Structures on InP Nanopyramids Formed by Selective-Area Flow Rate Modulation Epitaxy
- Fabrication of InP Submicron Pillars for Two-Dimensional Photonic Crystals by Reactive Ion Etching
- Fabrication of Two-Dimensional InP Photonic Band-Gap Crystals by Reactive Ion Etching with Inductively Coupled Plasma
- Effects of GaP Cap Layer Growth on Self-Assembled InAs Islands Grown on GaP(001) by Organometallic Vapor Phase Epitaxy
- Optically Detected Far-Infrared Magnetoabsorption in InGaAs
- Superconducting Transition of GdBa_2Cu_3O_
- Complex Susceptibility of YBa_2Cu_3O_
- Complex Susceptibility of La_Sr_CuO_
- High Power and High Resolution Near-Infrared Light Source for Optical Coherence Tomography Using Glass Phosphor and Light Emitting Diode
- Wideband infrared emission from Yb[3+] and Nd[3+]-doped Bi2O3-B2O3 glass phosphor for an optical coherence tomography light source
- Al_xGa_As Heterojunction Phototransistors Responding to Entire Visible Wavelength Region
- OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source
- Characterization of InP Grown by OMVPE Using Tertiary-butylphosphine for the Phosphorous Source
- Determination of Al Composition and DLTS Measurements of Al_xGa_Sb on GaSb Substrate
- Photoluminescence around 1.54μm from Er-containing ZnO at Room Temperature
- The High-T_c Phase with a New Modulation Mode in the Bi, Pb-Sr-Ca-Cu-O System : Electrical Properties of Condensed Matter
- Bond Length Relaxation in Ultrathin InAs and InP_As_ Layers on InP(001)
- Minor Actinides Incineration by Loading Moderated Targets in Fast Reactor
- Real Time Magnetic Imaging by Spin-Polarized Low Energy Electron Microscopy with Highly Spin-Polarized and High Brightness Electron Gun
- Hall Mobility and Hall Factor of In_Ga_As
- Growth Temperature Dependence of Electrical Properties of LPE-Al_Ga_Sb Characterized by p-n Junction Current Transport
- Observation of Electric Fields at Surface and Interface of Doped GaAs/Semi-insulating GaAs Structures by Fast Fourier Transformed Photoreflectance
- AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and their Photoluminescence Properties : Semiconductors and Semiconductor Devices
- Predicted Extremely High Mobilities of Two-Dimensional Electrons in AlGaSb/GaSb and AlInAsSb/InAs Single Heterostructures
- Incorporation Process of the As Atom on the InP(001) Surface Studied by Extended X-Ray Absorption Fine Structure
- Application of High Pressure and High Oxygen : Pressure to Copper Oxides : I-A New Materials and Material Design : I. Oxide Superconductors, Experiments I : Material Syntheses and Crystal Structures
- Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic Source : Condensed Matter
- Microdomain Structure in YBa_2(Cu_Fe_x)_3O_ Observed by Electron Microscopy : Electrical Properties of Condensed Matter
- Coherent Intergrowth Structure of Tetragonal and Orthorhombic Ba_2YCu_3O_ Observed by Transmission Electron Microscopy : Condensed Matter
- Electrical and Optical Properties of Ag/p-InP/p-InGaAs Schottky Photodiodes
- Fabrication of 1-μm Wavelength Region Ag/p-InP/p-InGaAs Schottky Photodiodes by LPE and Selective Etching
- Electron Spin Resonance Study of Low-Dimensional Magnetic Properties of MnF_2-CaF_2 Superlattices : Magnetism
- Electron Mobility Calculations of In_Ga_As Taking the Two-Mode Lattice vibrations into Account
- Thermal Stability of GaAs/InAs/GaAs Heterostructure Studied by X-Ray Crystal Truncation Rod Scattering Measurement
- 2P293 Formation of domains in fluorescent lipids doped DMPC-DOPC binary bilayers supported on SiO_2/Si substrates under local light irradiation.(40. Membrane structure,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Calculated Electron Mobility of Two-Dimensional Electrons in AIInAs/InGaAs and InP/InGaAs Single Heterostructures
- Influence of Long-Range Lateral Ordering in Structures with Quantum Dots on the Spatial Distribution of Diffracted X-Ray Radiation
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Room-Temperature 1.54μm Light Emission from Er,O-Codoped GaAs/GaInP Light-Emitting Diodes Grown by Low-Pressure Organometallic Vapor Phase Epitaxy
- In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs
- Structured Photoluminescence Spectrum in Laterally Anodized Porous Silicon
- Frequency Dependence of AC Josephson Effect in Point-Contact (Y, Er) BaCuO/Nb
- Properties of Zn-Doped P-Type In_Ga_As on InP Substrate
- High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes
- Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
- Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method
- Wideband Infrared Emission from Yb3+- and Nd3+-Doped Bi2O3–B2O3 Glass Phosphor for an Optical Coherence Tomography Light Source
- Mean Transverse Energy Measurement of Negative Electron Affinity GaAs-Based Photocathode
- Room-Temperature 1.54 μm Light Emission from Er,O-Codoped GaAs/GaInP Light-Emitting Diodes Grown by Low-Pressure Organometallic Vapor Phase Epitaxy
- Cross-Sectional Scanning Tunneling Microscopy Study of Interfacial Roughness in an InGaAs/InP Multiple Quantum Well Structure Grown by Metalorganic Vapor Phase Epitaxy
- Thermal Quenching of Er-Related Luminescence in GaInP Doped with Er by Organometallic Vapor Phase Epitaxy