Thermal Quenching of Er-Related Luminescence in GaInP Doped with Er by Organometallic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
Thermal quenching of Er-related photoluminescence (PL) due to intra-4f shell transitions of Er3+ ions has been investigated inGaxIn1-xP (0≤x≤1) doped with Er by organometallic vapor phase epitaxy (OMVPE). In GaInP grown on GaP and InP, the 4.2 K PL intensity gradually increases with increasing Ga composition, while the spectral shape remains unchanged. In GaInP grown on GaAs, the 4.2 K PL spectrum is dominated by three emission lines whose relative intensity depends on the Ga composition. Thermal quenching of the Er-related luminescence gradually decreases with increasing Ga composition, i.e., increasing band gap. PL lifetimes and their temperature variations are discussed in relation to deep-level properties of Er in the excitation mechanism of the 4f shell.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-02-28
著者
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Takeda Yoshikazu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Kawamoto Takeshi
Department Of Anesthesiology Kansai Denryoku Hospital
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Ichida Masao
Center For Integrated Research In Science And Engineering Nagoya University
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Yamakawa Ichiro
Center For Integrated Research In Science And Engineering Nagoya University
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Fujiwara Yasufumi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Watanabe Osamu
Department Of Computer Science And Systems Engineering Muroran Institute Of Technology
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ITO Takashi
Department of Advanced Materials Chemistry, Graduate School of Engineering, Yokohama National University
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Fujiwara Yasufumi
Department of Materials Science and Engineering, Graduate School of Engineering,
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AraoNakamura AraoNakamura
Center for Integrated Research in Science and Engineering,
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Watanabe Osamu
Department of Applied Chemistry, Faculty of Engineering, Yamagata University
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Takeda Yoshikazu
Department of Materials Science and Engineering, Graduate School of Engineering,
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