Room-Temperature 1.54μm Light Emission from Er,O-Codoped GaAs/GaInP Light-Emitting Diodes Grown by Low-Pressure Organometallic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-30

著者

• Takeda Yoshikazu

  Department Of Electrical Engineering Kyoto University:(present Address) Department Of Materials Nago

• Takeda Yoshikazu

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• Inoue Kentaro

  Department Of Nuclear Medicine And Radiology Institute Of Development Aging And Cancer Tohoku Univer

• KOIZUMI Atsushi

  Department of Agricultural and Biological Chemistry, Nihon University

• FUJIWARA Yasufumi

  Department of Materials Science and Engineering, Nagoya University

• Inoue Kentaro

  Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University

• Koizumi Atsushi

  Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University

• Koizumi Atsushi

  Department Of Agricultural And Biological Chemistry Nihon University

• URAKAMI Akira

  Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University

• YOSHIKANE Taketoshi

  Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University

• Urakami Akira

  Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University

• Fujiwara Yasufumi

  Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University

• Yoshikane Taketoshi

  Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University

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