Effects of GaP Cap Layer Growth on Self-Assembled InAs Islands Grown on GaP(001) by Organometallic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-06-15
著者
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Takeda Yoshikazu
Department Of Electrical Engineering Kyoto University:(present Address) Department Of Materials Nago
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Takeda Yoshikazu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Takeda Y
Department Of Chemistry Faculty Of Engineering Mie University
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Takeda Y
Nagoya Univ. Nagoya Jpn
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FUJIWARA Yasufumi
Department of Materials Science and Engineering, Nagoya University
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FUCHI Shingo
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
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NONOGAKI Youichi
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
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MORIYA Hiromitsu
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
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Takeda Yasuo
Department Of Chemistry Faculty Of Engineering Mie Univerisity
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Fujiwara Yasuaki
Department Of Mechanical Engineering Nagaoka University Of Technology
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Fujiwara Yuichiro
Department Of Applied Physics The University Of Tokyo
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Fuchi Shingo
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Fuchi Shingo
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Moriya Hiromitsu
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Nonogaki Y
Inst. Molecular Sci. Okazaki Jpn
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Fujiwara Y
Univ. Tokyo Tokyo
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Fujiwara Yasufumi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Nonogaki Youichi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Moriya Hiromitsu
Department of Chemistry, Science University of Tokyo
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