Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method
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概要
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NdFeAs(O,F) thin films were grown on MgO substrates by molecular beam epitaxy. The growth parameters were found to be different from those of GaAs substrates of our earlier work, and regulating the amount of fluorine was necessary to grow the target phase. The use of Ga as a getter was very effective for this purpose. We also found that doping fluorine, which had been a key challenge faced in the growth of LnFeAs(O,F) (Ln = lanthanide), is possible by growing a fluoride layer on top of NdFeAsO, resulting in a thin film with a high critical temperature.
- Japan Society of Applied Physicsの論文
- 2011-08-25
著者
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Takeda Yoshikazu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Ujihara Toru
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Ohno Toshiya
Department Of Crystalline Materials Science Nagoya University
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Ikuta Hiroshi
Department Of Applied Physics The University Of Tokyo
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Uemura Hiroki
Department Of Crystalline Materials Science Nagoya University
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Tabuchi Masao
Venture Business Laboratory (vbl) Nagoya University
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Kawaguchi Takahiko
Department Of Crystalline Materials Science Nagoya University
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