High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth
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概要
- 論文の詳細を見る
The high-efficiency conversion of threading screw dislocations (TSDs) in 4H-SiC by solution growth provides an efficient method of obtaining ultra high-quality SiC crystals. The behavior of TSDs on on-axis and off-axis 4H-SiC{0001} seed crystals was investigated by synchrotron X-ray topography. Almost all TSDs in the off-axis Si-face seed crystal were converted to Frank-type stacking faults on the basal planes. The conversion ratio of TSDs was highly influenced by the surface polarity of the seed crystal. The stacking faults laterally propagate toward the outside of the crystal.
- The Japan Society of Applied Physicsの論文
- 2012-11-25
著者
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Ujihara Toru
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Harada Shunta
Department of Materials Science and Engineering, Kyoto University
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YAMAMOTO Yuji
Department of Agricultural Chemistry, Faculty of Agriculture, Tokyo University of Agriculture
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MITSUHASHI Takato
Department of Materials Science and Engineering, Nagoya University
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HORIO Atsushi
Department of Materials Science and Engineering, Nagoya University
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Seki Kazuaki
Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan
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