Substrate Dependence of Structural and Transport Properties in FeSe0.5Te0.5 Thin Films
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概要
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In order to clarify the best condition for the growth of iron chalcogenide superconductor thin films, we investigated the effect of the substrate on the transport and structural properties of films. Thin films of FeSe0.5Te0.5 grown by pulsed laser deposition were characterized by DC electrical resistivity, Hall effect, X-ray diffraction measurements, and transmission electron microscopy (TEM) observation. The $c$-axis length of the FeSe0.5Te0.5 thin films revealed a non-systematic change with the cell constants of the substrates. In the films with poor or no superconductivity, we found the occurrence of oxygen penetration to the film and the formation of amorphous layer between the film and the substrate. The origin of the oxygen penetration and the amorphous layer was the chemical properties of substrate. From the chemical viewpoint, LaAlO3 and MgO substrates were confirmed to be appropriate to grow FeSe0.5Te0.5 films.
- 2011-05-25
著者
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Ichinose Ataru
Central Research Institute Of Electric Power Industry
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Tsukada Ichiro
Central Research Institute Of Electric Power Industry
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Ikuta Hiroshi
Department Of Applied Physics The University Of Tokyo
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Imai Yoshinori
Department Of Basic Science The University Of Tokyo
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Maeda Atsutaka
Department Of Applied Physics The University Of Tokyo
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HANAWA Masafumi
Central Research Institute of Electric Power Industry
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Hikage Tatsuo
High Intensity X-ray Diffraction Laboratory Nagoya University
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Kawaguchi Takahiko
Department Of Crystalline Materials Science Nagoya University
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KOMIYA Seiki
Central Research Institute of Electric Power Industry
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Akiike Takanori
Department Of Basic Science The University Of Tokyo
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Ikuta Hiroshi
Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan
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Hanawa Masafumi
Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa 240-0196, Japan
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Akiike Takanori
Department of Basic Science, The University of Tokyo, Meguro, Tokyo 153-8902, Japan
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Ichinose Ataru
Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa 240-0196, Japan
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Hikage Tatsuo
High Intensity X-ray Diffraction Laboratory, Nagoya University, Nagoya 464-8603, Japan
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Kawaguchi Takahiko
Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan
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