Pulsed-Laser Deposition of LiNbO3 Thin Films at Low Oxidation Gas Pressure with Pure Ozone
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概要
- 論文の詳細を見る
The pulsed-laser deposition growth of LiNbO3 thin films is carried out using a stoichiometric polycrystalline target in an ozone atmosphere. Reducing the gas pressure to $5\times 10^{-3}$ Pa is found to be effective for suppressing the appearance of a Li-deficient phase in the films. Consequently, the chemical composition of the film prepared at an optimum substrate temperature of 550°C is close to stoichiometric values, which indicates that the long mean free paths of Li and Nb are a key issue in the control of the stoichiometry of LiNbO3 thin films. Moreover, the obtained films show a sufficiently high optical absorption edge of 4.19 eV, which is 0.24 eV higher than that of a stoichiometric LiNbO3 single crystal.
- Japan Society of Applied Physicsの論文
- 2003-09-15
著者
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Tsukada Ichiro
Central Research Institute Of Electric Power Industry
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HIGUCHI Sadao
Central Research Institute of Electric Power Industry
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Tsukada Ichiro
Central Research Institute of Electric Power Industry, 2-11-1 Iwado-kita, Komae, Tokyo 201-8511, Japan
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