Effects of Growth Temperature on Er-Related Photoluminescence in Er-Doped InP and GaAs Grown by Organometallic Vapor Phase Epitaxy with Tertiarybutylphosphine and Tertiarybutylarsine
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-05-15
著者
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Takeda Yoshikazu
Department Of Electrical Engineering Kyoto University:(present Address) Department Of Materials Nago
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Takeda Yoshikazu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Ito Takashi
Department Of Physics University Of Tokyo
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Takeda Y
Department Of Chemistry Faculty Of Engineering Mie University
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Takeda Y
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Takeda Y
Nagoya Univ. Nagoya Jpn
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FUJIWARA Yasufumi
Department of Materials Science and Engineering, Nagoya University
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TSUCHIYA Junji
Department of Materials Science and Engineering, Nagoya University
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MATSUBARA Naoteru
Department of Materials Science and Engineering, School of Engineering, Nagoya Unversity
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Takeda Yasuo
Department Of Chemistry Faculty Of Engineering Mie Univerisity
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Fujiwara Yasuaki
Department Of Mechanical Engineering Nagaoka University Of Technology
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Fujiwara Yuichiro
Department Of Applied Physics The University Of Tokyo
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Ito Takashi
Department Of Chemistry School Of Science The University Of Tokyo
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Ito T
Osaka Univ. Osaka Jpn
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Tsuchiya J
Department Of Materials Science And Engineering School Of Engineering Nagoya Unversity
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Tsuchiya Junji
Department Of Materials Science And Engineering School Of Engineering Nagoya Unversity
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Fujiwara Y
Univ. Tokyo Tokyo
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Matsubara Naoteru
Department Of Materials Science And Engineering School Of Engineering Nagoya Unversity
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Fujiwara Yasufumi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Ito Takashi
Department of Chemical Engineering, Graduate School of Engineering, Nagoya University
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ITO Takashi
Department of Advanced Materials Chemistry, Graduate School of Engineering, Yokohama National University
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