High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes
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概要
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We developed AlGaAs photocathodes with low electron affinity for long negative electron affinity (NEA) lifetime. AlGaAs photocathodes achieved 10 times longer NEA lifetime than conventional NEA-GaAs photocathodes. We estimated the appropriate superlattice structure for small conduction mini band width, high density of state in the conduction band and high splitting energy between the heavy- and light-hole bands by theoretical energy band calculation. We conclude that the AlGaAs–GaAs superlattice semiconductor is a suitable NEA-GaAs photocathode that not only has acceptable NEA lifetime but also fulfills the requirements of small energy spread of photoelectrons, high quantum yield and highly spin-polarized electrons.
- 2009-06-25
著者
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Takeda Yoshikazu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Tabuchi Masao
Venture Business Laboratory (vbl) Nagoya University
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Meguro Takashi
Beam Application Team Riken
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Suzuki Yuji
Department Of Astronomy Kyoto University
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Meguro Takashi
Beam Application Team, RIKEN, Wako, Saitama 351-0198, Japan
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Nishitani Tomohiro
Beam Application Team, RIKEN, Wako, Saitama 351-0198, Japan
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Motoki Kazuya
Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8601, Japan
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Suzuki Yuji
Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8601, Japan
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Tabuchi Masao
Venture Business Laboratory, Nagoya University, Nagoya 464-8601, Japan
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SUZUKI Yuji
Department of Agriculture, Graduate School of Agricultural Science, Tohoku University
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