OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-07-20
著者
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Takeda Yoshikazu
Department Of Electrical Engineering Kyoto University:(present Address) Department Of Materials Nago
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Takeda Yoshikazu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Takeda Y
Department Of Chemistry Faculty Of Engineering Mie University
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Takeda Y
Nagoya Univ. Nagoya Jpn
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Sasaki A
Shizuoka Univ. Hamamatsu Jpn
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SASAKI Akio
Department of Electrical Engineering, Kyoto University
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Takeda Yasuo
Department Of Chemistry Faculty Of Engineering Mie Univerisity
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NODA Susumu
Department of Electrical Engineering, Kyoto University
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ARAKI Soichiro
Department of Electrical Engineering, Kyoto University
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TAKEMI Masayoshi
Department of Electrical Engineering, Kyoto University
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Noda Susumu
Department Of Electrical Engineering Kyoto University
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Sasaki Akio
Department Of Electrical Engineering Kyoto University
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Takemi Masayoshi
Department Of Electrical Engineering Kyoto University
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Noda Susumu
Department of Electric Science and Engineering, Kyoto University
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