GaP, AlGaAs/GaAs, AlGaAsSb/GaSb Photovoltaic Devices and Characteristics : II-1: COMPOUND SOLAR CELLS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-12-20
著者
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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SASAKI Akio
Department of Electrical Engineering, Kyoto University
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NODA Susumu
Department of Electrical Engineering, Kyoto University
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Noda Susumu
Department Of Electrical Engineering Kyoto University
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ISHIO Keisuke
Department of Electrical Engineering, Kyoto University
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Ishio Keisuke
Department Of Electrical Engineering Kyoto University
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Sasaki Akio
Department Of Electrical Engineering Kyoto University
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Noda Susumu
Department of Electric Science and Engineering, Kyoto University
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- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn_Cd_ySe/ZnS_xSe_
- Growth of Short-Period ZnSe-ZnS_xSe_ Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy
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- Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator-Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy
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