Structural Analysis of ZnSe-GaAs Quantum Wells
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概要
- 論文の詳細を見る
The structural properties of ZnSe-GaAs quantum welts (QWs) grown by metalorganic vapor phase epitaxy are described. Detailed theoretical and experimental studies on X-ray diffraction show that when the thickness of the QW well layer is comparable to that of the barrier layer, satellite peaks which reflect the period of QW can appear even in diffraction patterns of a single quantum well. It is also shown that the intensity of X-ray interference fringes can be modulated by fluctuation of each individual layer thickness in a multiple quantum well. These analyses revealed that it was possible to fabricate ZnSe-GaAs QWs with only 10 Å well thickness, and that these structures had high crystalline quality, a high degree of lateral uniformity, well-defined interfaces, and strong periodicity. Transmission electron microscopy also gave evidence for these properties.
- 社団法人応用物理学会の論文
- 1993-08-15
著者
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Fujita Shizuo
Department Of Electronic Science And Engineering Kyoto University
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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Fujita S
Hachinohe Inst. Technol. Aomori Jpn
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Fujita Shigetaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Hachinohe Institute Of Te
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FUNATO Mitsuru
Department of Electronic Science and Engineering, Kyoto University
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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