Preparation of ZnSe-ZnTe Heterojunctions by Liquid-Phase Epitaxial Growth
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概要
- 論文の詳細を見る
ZnSe-ZnTe heterojunctions are prepared from the epitaxial deposition of ZnTe on ZnSe single crystal substrates by a liquid-phase epitaxial growth process. Bismuth or zinc is employed as a solvent for ZnTe. Open or sealed tube systems are used in the growth from bismuth or zinc solution, respectively. ZnTe layers of good quality are obtained only on the (111)_<Se> faces of the substrates when growing from bismuth solution, while they are produced on both (111) faces in the growth from zinc solution under the experimental conditions employed. These growth habits of the grown layers are explained in connection with the surface states of the substrates subjected to thermal etching. The crystal states at the interface region are also studied by E.M.X. and transmission measurements, and it is shown that the states depend upon the growth temperature.
- 社団法人応用物理学会の論文
- 1973-12-05
著者
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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Fujita Shigeo
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Arai Seiichi
Department Of Electrical Engineering Faculty Of Engineering Kyoto University:(present Address)murata
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SAKAGUCHI Tadao
Department of Electrical Engineering II, Faculty of Engineering, Kyoto University
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MORIAI Fumi
Department of Electrical Engineering, Faculty of Engineering, Kyoto University
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Moriai Fumi
Department Of Electrical Engineering Faculty Of Engineering Kyoto University:(present Address)centra
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Sakaguchi Tadao
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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FUJITA Shigeo
Department of Electrical Engineering, Faculty of Engineering, Kyoto University
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