Interface Stress at ZnSe/GaAs:Cr Heterostructure
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概要
- 論文の詳細を見る
The interface stress at ZnSe/ GaAs:Cr heterostructures grown by OMVPE has been investigated by measuring the Cr-related zero-phonon photoluminescence lines at 0.839 eV from the GaAs substrates. Based on analyses regarding the energy-shift and splitting of the luminescence lines, it has been found that a compressive biaxial stress exists in the substrate sides of these heterostructures; this is inconsistent with the stresses predicted for a lattice mismatch between the ZnSe epitaxial layer and the GaAs substrate. The interface stress at ZnSe/ GaAs:Cr heterostructures grown by MBE were also investigated and the results are similar to those for OMVPE-grown heterostructures.
- 社団法人応用物理学会の論文
- 1986-11-20
著者
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Fujita S
Department Of Electronic Science And Engineering Kyoto University
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Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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NISHINO Taneo
Department of Electrical and Electronics Engineering, Kobe University
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Fujita S
Hachinohe Inst. Technol. Aomori Jpn
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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FUJIWARA Yasufumi
Department of Materials Science and Engineering, Nagoya University
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Nishino Taneo
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Shirakata Sho
Department Of Electrical And Electronic Engineering Ehime University
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Shirakata Sho
Department Of Electric And Electronic Engineering Faculty Of Engineering Ehime University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Fujiwara Y
Univ. Tokyo Tokyo
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Fujiwara Yasufumi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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