3d-Transition Metal Related Photoluminescence in In_<1-x>Ga_xP Alloys
スポンサーリンク
概要
- 論文の詳細を見る
Photoluminescence spectra related to a series of 3d transition metals (V, Cr, Co and Ni) in In_<1-x>Ga_xP alloys have been systematically measured at liquid He temperature. The spectra in In_<1-x>Ga_xP have shown broad bands without characteristic zero-phonon lines which can be observed in both GaP and InP. In particular, Co-related spectra in In_<1-x>Ga_xP (0.74<x<1) have been precisely investigated and analyzed, the results showing that such broad bands are due to the perturbation by disordering of Ga and In atoms in the cation sublattice of In_<1-x>Ga_xP alloys.
- 社団法人応用物理学会の論文
- 1987-02-20
著者
-
HAMAKAWA Yoshihiro
Faculty of Engineering Science, Osaka University
-
Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
-
SHIRAKATA Sho
Faculty of Engineering Science, Osaka University
-
NISHINO Taneo
Faculty of Engineering Science, Osaka University
-
KATO Takamasa
Faculty of Engineering, Yamanashi University
-
ISHIDA Tetsuro
Faculty of Engineering, Department of Electronic Engineering, Yamanashi University
-
Kato Takamasa
Faculty Of Engineering Yamanashi University
-
Nishino T
Mie Univ. Tsu Jpn
-
Nishino Taneo
Faculty Of Engineering Kobe University
-
Ishida T
Faculty Of Engineering Yamanashi University
-
Ishida Tetsuro
Faculty Of Engineering Department Of Electronic Engineering Yamanashi University:(present Address) D
-
Hamakawa Yoshihiro
Faculty Of Engineering Science Osaka University
-
Shirakata Sho
Faculty Of Engineering Ehime University
-
Kato Takamasa
Faculty Of Engineering Department Of Electronic Engineering Yamanashi University
-
Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
関連論文
- Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
- Lifetime and diffusion coefficient of carriers in X-ray irradiated a-Si:H
- Threshold Voltage Control Using Floating Back Gate for Ultra-Thin-Film SOI CMOS
- Silicon Wafer Direct Bonding through the Amorphous Layer
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- LPE Growth of InGa_xP_As_on GaAs Substrate by Two-Phase Melt Method.
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Characterization of Thermally-Induced Defects in CZ-Si by Room-Temperature Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Photoluminescence Characterization of Polycrystalline Si for Solar Cells : I-3: CHARACTERIZATION OF SOLAR CELLS
- Rapid Characterization of Solar Cell Performances : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Deep Impurity Levels in InP LEC Crystals
- Bound Multiexciton Luminescence in Lithium-Doped Silicon
- Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Bandgap Energy of InGaAsP Quaternary Alloy
- Preparation and Properties of InGaAsP p-n Junction for Fabrication of Photodetectors in Optical Communication Systems : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
- Observation of Deep Impurity Levels in In_GA_As_P_
- Bound Multiexciton Luminescence in Boron-Doped Silicon: Excitation-Level Dependence and Recombination Kinetics
- Temperature and Impurity-Concentration Dependence of the Exciton Two-Electron Luminescence from Phosphorus-Doped Silicon
- Differential Photovoltage Spectra of Au-GaAs_P_x Schottky-Barrier Diodes
- Lineshape Morphology in Modulation Spectroscopy (Selected Topics in Semiconductor Physics) -- (Modulation Spectroscopy)
- Optical Absorption Edge of Layer Compound InS Grown from In Melt
- Amorphous Si : H Heteroface Photovoltaic Cells Based Upon p-i-n Junction Structure : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
- Raman Spectra of CuInSe_2 Thin Films Prepared by Chemical Spray Pyrolysis
- Hydrogen Content in a-SiC:H Films Prepared by Plasma Decomposition of Silane and Methane or Ethylene
- Characterization of Film and Junction Qualities in a-Si Solar Cells : C-5: SOLAR CELLS
- Characterization of a-SiC : H as a Window Material for p-i-n a-Si Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- A New Model for Simulating Photocarrier Collection in Amorphous Silicon Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Determination of the Built-in Potential in a-Si Solar Cells by Means of Electroabsorption Method
- Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar Cell : III-4: AMORPHOUS SOLAR CELLS : Device Performances
- Study of Drift Type Photovoltaic Effect in Amorphous Silicon p-i-n Junction Structure : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Fabrication of Si-As-Te Amorphous Semiconductor in a Microgravity Environment
- Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence Multilayered Thin Films
- Diffusion Profiles of Cd in InP
- Photoluminescence Measurements for Cd-Diffused InP p-n Junction
- Chemical Vapor Deposition of PbTiO_3 Thin Film : T: THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by Chemical Vapor Deposition
- Preparation of PbTiO_3 Ferroelectric Thin Film by Laser Annealing : THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by RF Sputtering
- Ferroelectric Properties of RF Sputtered PLZT Thin Film
- Phosphorous Gettering on Spherical Si Solar Cells Fabricated by Dropping Method
- Crystal Growth Mechanism of Spherical Silicon Fabricated by Dropping Method
- Fabrication of Spherical Silicon Solar Cells with Semi-Light-Concentration System
- Research and Development of a 100-kWp Photovoltaic Power Generation System for a Factory
- A Study of Optimum Operation by Voltage Mode Control for Solar Photovoltaic Systems
- Room-Temperature Photoreflectance of CuAl_xGa_Se_2 Alloys
- Crystal Growth and Optical Properties of CuAl(S_xSe_)_2 Alloys
- Electroreflectamce of CuInSe_2 Single Crystals
- Visible and Ultraviolet Photoluminescence from Cu-III-VI_2 Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy
- Visible and Ultraviolet Photoluminescence from Cu-III-VI_2 Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy
- Heteroepitaxial Growth of CuGaS_2 Layers by Low-Pressure Metalorganic Chemical Vapor Deposition
- Zn-Related Donor-Acceptor Pair Emission in CuAlSe_2 Epitaxial Layers
- Preparation and Characterization of Cu(Al, Ga)(S, Se)_2 Penternary Alloys
- 2.51 eV Donor-Acceptor Pair Photoluminescence from Zn-Doped CuAlSe_2 Epilayer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Improvement of Interface Properties in μc-SiC/poly-Si/μc-Si Double Heterojunction Solar Cell
- Impurity Electroabsorption of GaAs
- Exciton Electroabsorption in Germanium Single Crystal
- Possible Errors due to Deviation from the Cosine Response in the Reference Cell Calibration under Global Irradiance
- Design Parameters of a-Si:H High-Voltage Photovoltaic Cells : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Temperature Dependence of Thermoabsorption Spectrum of Lead Sulphide
- Electro- and Thermo-Reflectance of Lead Selenide Single Crystal
- Epitaxial Growth of PLZT Single Crystal Film on SrTiO_3 by RF Sputtering
- An Enhancement of Photochromic Effect by Multi-Reflection Scattering in Fe-Doped PLZT
- Ferroelectric PLZT Thin Films Fabricated by RF Sputtering
- Electronic Polarizabilities of Transition Metal Ions and Rare-Earth Ions in II-VI Semiconductors
- Kinetics of Plasma Deposition of a-Si:H Films
- Amorphous Si/Polycrystalline Si Stacked Solar Cell Having More Than 12% Conversion Efficiency
- Tunneling Current Due to Thermionic-Field Emission in an Au-InS Schottky-Barrier Diode
- High-Brightness Green-Light-Emitting Thin-Film Electroluminescent Device : B-2: GaAs FET/LED AND DETECTOR
- Electroluminescence in ZnS_Te_x:CeF_3 Thin-Film Devices Prepared in Oxygen Atmosphere
- Recent Progress of the Amorphous Silicon Solar Cell Technology : C-5: SOLAR CELLS
- Supplementary-Light Method for Measuring the Conversion Efficiency of Multijunction Solar Cells
- Japanese Indoor Calibration Method for the Reference Solar Cell and Comparison with the Outdoor Calibration
- Visible-Light Injection-Electroluminescent a-SiC / p-i-n Diode
- Amorphous-Silicon Photovoltaic X-Ray Sensor
- Electroreflectance and Photoluminescence Studies of In_Ga_xP_As_y Lattice-Matched to GaAs
- A Study on LPE Growth of IN_Ga_xPAs_y(y≃0) on (100) GaAs Substrate
- Preparation and Properties of InS Single Crystals
- Observation of a New Chromium-Related Complex in GaAs:Cr
- Effects of In Doping on Cr-Related Luminescence in GaAs
- On the Bound-Exciton Luminescence from Highly Doped Silicon
- 3d-Transition Metal Related Photoluminescence in In_Ga_xP Alloys
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy
- Thermal and Electric Field Broadening in Electro-Optical Effect
- Electroreflectance in GaAs near the Fundamental Edge at 25°K
- Electronic Polarizabilities of Isoelectronic Impurities in II-VI Compounds
- Anion Vacancy States in the Insulator-ZnS Interface
- A Model for Emissions from ZnS:Ce^ and SrS:Ce^ Thin-Film Electroluminescent Devices
- Hall-Effect Measurement on Polycrystalline SnO_2 Thin Films : Electrical Properties of Condensed Matter
- In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs
- Deep-Level Luminescence of Cr-Doped GaAsP Alloys
- Deep-Level Luminescence in Ni-Diffused GaAs
- Photoluminescence and Lattice Mismatch in InGaAs/InP
- Cr-Related Intracenter Luminescence in GaAs: Cr
- Interface Stress at OMVPE-Grown ZnS_xSe_/GaAs:Cr Heterostructure : Surfaces, Interfaces and Films