Threshold Voltage Control Using Floating Back Gate for Ultra-Thin-Film SOI CMOS
スポンサーリンク
概要
- 論文の詳細を見る
With the fully depleted ultra-thin-film SOI CMOS, one important issue is controlling the threshold voltage (V_ltthgt) while maintaining high speed operation and low power consumption. To control the V_ltthgt, applying a bias voltage to the substrate is one of the most practical methods. We suggest a fully depleted ultra-thin-film SOI CMOS with a floating back gate, which is formed at the lower part of the channel field inside the substrate and stores electrons injected into it. This device can eliminate the necessity of an extra circuit or a separate power supply to apply a negative voltage. The silicon wafer direct bonding technique is used to construct this device. With the prototyped devices, we can successfully control the V_ltthgt for both the nMOSFET and pMOSFET at around ±0.5 V by controlling the quantity of the electric charges injected into the floating back gate.
- 社団法人電子情報通信学会の論文
- 1995-12-25
著者
-
HAMAKAWA Yoshihiro
Faculty of Engineering Science, Osaka University
-
Fujino S
Denso Corp. Aichi‐ken Jpn
-
Fujino S
Electronics Device R&d Center Denso Corporation
-
Hattori T
Renesas Technol. Corp. Kodaira‐shi Jpn
-
Fujino Seiji
Research Laboratories, Nippondenso Co., Ltd.
-
Tsuruta Kazuhiro
Research Laboratories, Nippondenso Co., Ltd.
-
Asai Akiyoshi
Research Laboratories, Nippondenso Co., Ltd.
-
Hattori Tadashi
Research Laboratories, Nippondenso Co., Ltd.
-
Fujino Seiji
Electronics Device R&d Center Denso Corporation
-
Fujino Seiji
Research Institute For Information Technology Kyushu University
-
Hattori Tadashi
Research Laboratories Denso Corporation
-
Hamakawa Yoshihiro
Faculty Of Engineering Science Osaka University
-
Asai Akiyoshi
Research Laboratories Nippondenso Co. Ltd.
-
Tsuruta Kazuhiro
Research Laboratories Nippondenso Co. Ltd.
-
Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
-
Fujino Seiji
Research Institute For Information Technology
-
HATTORI TADASHI
Research Center for Advanced Waste and Emission Management, Nagoya University
関連論文
- Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
- Lifetime and diffusion coefficient of carriers in X-ray irradiated a-Si:H
- Threshold Voltage Control Using Floating Back Gate for Ultra-Thin-Film SOI CMOS
- Silicon Wafer Direct Bonding through the Amorphous Layer
- Superjunction by Wafer Direct Bonding
- LPE Growth of InGa_xP_As_on GaAs Substrate by Two-Phase Melt Method.
- Characterization of Thermally-Induced Defects in CZ-Si by Room-Temperature Photoluminescence
- Photoluminescence Characterization of Polycrystalline Si for Solar Cells : I-3: CHARACTERIZATION OF SOLAR CELLS
- Deep Impurity Levels in InP LEC Crystals
- Bound Multiexciton Luminescence in Lithium-Doped Silicon
- Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
- Bandgap Energy of InGaAsP Quaternary Alloy
- Preparation and Properties of InGaAsP p-n Junction for Fabrication of Photodetectors in Optical Communication Systems : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
- Observation of Deep Impurity Levels in In_GA_As_P_
- Bound Multiexciton Luminescence in Boron-Doped Silicon: Excitation-Level Dependence and Recombination Kinetics
- Temperature and Impurity-Concentration Dependence of the Exciton Two-Electron Luminescence from Phosphorus-Doped Silicon
- Differential Photovoltage Spectra of Au-GaAs_P_x Schottky-Barrier Diodes
- Lineshape Morphology in Modulation Spectroscopy (Selected Topics in Semiconductor Physics) -- (Modulation Spectroscopy)
- Optical Absorption Edge of Layer Compound InS Grown from In Melt
- Photooxidation of Propene to Propene Oxide by Molecular Oxygen over Zinc Oxide Dispersed on Silica
- Effect of Hydrothermal Treatment of Titania-pillared Montmorillonite for Photocatalytic Degradiation of Dibutyl Phthalate in Water
- Photooxidation of Propene by Molecular Oxygen over FSM-16
- Amorphous Si : H Heteroface Photovoltaic Cells Based Upon p-i-n Junction Structure : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
- A determination of coefficients of GPBiCG-AR method by reconsideration on inner product (ハイパフォーマンスコンピューティング)
- Silicon Wafer Direct Bonding without Hydrophilic Native Oxides
- Reduced Urination Rate while Drinking Beer with an Unpleasant Taste and Off-flavor
- Correlation between the Drinkability of Beer and Gastric Emptying
- H_2 Partial Pressure Dependences of CH_3 Radical Density and Effects of H_2 Dilution on Carbon Thin-Film Formation in RF Discharge CH_4 Plasma
- Effect of Rare Gas Dilution on CH_3 Radical Density in RF-Discharge CH_4 Plasma
- Hydrogen Content in a-SiC:H Films Prepared by Plasma Decomposition of Silane and Methane or Ethylene
- Characterization of Film and Junction Qualities in a-Si Solar Cells : C-5: SOLAR CELLS
- Characterization of a-SiC : H as a Window Material for p-i-n a-Si Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- A New Model for Simulating Photocarrier Collection in Amorphous Silicon Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Determination of the Built-in Potential in a-Si Solar Cells by Means of Electroabsorption Method
- Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar Cell : III-4: AMORPHOUS SOLAR CELLS : Device Performances
- Study of Drift Type Photovoltaic Effect in Amorphous Silicon p-i-n Junction Structure : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Fabrication of Si-As-Te Amorphous Semiconductor in a Microgravity Environment
- Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence Multilayered Thin Films
- Diffusion Profiles of Cd in InP
- Photoluminescence Measurements for Cd-Diffused InP p-n Junction
- Chemical Vapor Deposition of PbTiO_3 Thin Film : T: THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by Chemical Vapor Deposition
- Preparation of PbTiO_3 Ferroelectric Thin Film by Laser Annealing : THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by RF Sputtering
- Ferroelectric Properties of RF Sputtered PLZT Thin Film
- A 25kV ESD Proof LDMOSFET with a Turn-on Discharge MOSFET
- A Single Chip Automotive Control LSI Using SOI Bipolar Complimentary MOS Double-Diffused MOS
- A 200V CMOS SOI IC with Field-Plate Trench Isolation for EL Displays
- A Single Chip Automotive Control LSI Using SOI BiCDMOS
- Effect of Pore-Diffusionn on Catalytic Reduction of NO over Co- and Cu-Mordenites
- Phosphorous Gettering on Spherical Si Solar Cells Fabricated by Dropping Method
- Crystal Growth Mechanism of Spherical Silicon Fabricated by Dropping Method
- Fabrication of Spherical Silicon Solar Cells with Semi-Light-Concentration System
- Research and Development of a 100-kWp Photovoltaic Power Generation System for a Factory
- A Study of Optimum Operation by Voltage Mode Control for Solar Photovoltaic Systems
- Intelligent Power IC with Partial SOI Structure
- Soft X-Ray Emission Spectroscopic Analysis of Pt Silicides (Pt_2Si, PtSi)
- Improvement of Interface Properties in μc-SiC/poly-Si/μc-Si Double Heterojunction Solar Cell
- Impurity Electroabsorption of GaAs
- Exciton Electroabsorption in Germanium Single Crystal
- Development of time-to-digital converter IC for laser radar
- A CMOS Time-to-Digital Converter LSI with Half-Nanosecond Resolution Using a Ring Gate Delay Line (Special Issue on ASICs for Automotive Electronics)
- Possible Errors due to Deviation from the Cosine Response in the Reference Cell Calibration under Global Irradiance
- Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy
- Design Parameters of a-Si:H High-Voltage Photovoltaic Cells : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Temperature Dependence of Thermoabsorption Spectrum of Lead Sulphide
- Electro- and Thermo-Reflectance of Lead Selenide Single Crystal
- Epitaxial Growth of PLZT Single Crystal Film on SrTiO_3 by RF Sputtering
- An Enhancement of Photochromic Effect by Multi-Reflection Scattering in Fe-Doped PLZT
- Ferroelectric PLZT Thin Films Fabricated by RF Sputtering
- Electronic Polarizabilities of Transition Metal Ions and Rare-Earth Ions in II-VI Semiconductors
- Kinetics of Plasma Deposition of a-Si:H Films
- Amorphous Si/Polycrystalline Si Stacked Solar Cell Having More Than 12% Conversion Efficiency
- Tunneling Current Due to Thermionic-Field Emission in an Au-InS Schottky-Barrier Diode
- High-Brightness Green-Light-Emitting Thin-Film Electroluminescent Device : B-2: GaAs FET/LED AND DETECTOR
- Electroluminescence in ZnS_Te_x:CeF_3 Thin-Film Devices Prepared in Oxygen Atmosphere
- Recent Progress of the Amorphous Silicon Solar Cell Technology : C-5: SOLAR CELLS
- 3-Dimensional Specific Thickness Glass Diaphragm Lens for Dynamic Focusing
- Supplementary-Light Method for Measuring the Conversion Efficiency of Multijunction Solar Cells
- Japanese Indoor Calibration Method for the Reference Solar Cell and Comparison with the Outdoor Calibration
- Visible-Light Injection-Electroluminescent a-SiC / p-i-n Diode
- Amorphous-Silicon Photovoltaic X-Ray Sensor
- Electroreflectance and Photoluminescence Studies of In_Ga_xP_As_y Lattice-Matched to GaAs
- A Study on LPE Growth of IN_Ga_xPAs_y(y≃0) on (100) GaAs Substrate
- Preparation and Properties of InS Single Crystals
- Observation of a New Chromium-Related Complex in GaAs:Cr
- Effects of In Doping on Cr-Related Luminescence in GaAs
- On the Bound-Exciton Luminescence from Highly Doped Silicon
- 3d-Transition Metal Related Photoluminescence in In_Ga_xP Alloys
- Thermal and Electric Field Broadening in Electro-Optical Effect
- Electroreflectance in GaAs near the Fundamental Edge at 25°K
- Electronic Polarizabilities of Isoelectronic Impurities in II-VI Compounds
- Anion Vacancy States in the Insulator-ZnS Interface
- A Model for Emissions from ZnS:Ce^ and SrS:Ce^ Thin-Film Electroluminescent Devices
- Hall-Effect Measurement on Polycrystalline SnO_2 Thin Films : Electrical Properties of Condensed Matter
- Deep-Level Luminescence of Cr-Doped GaAsP Alloys
- Deep-Level Luminescence in Ni-Diffused GaAs