Deep-Level Luminescence of Cr-Doped GaAsP Alloys
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概要
- 論文の詳細を見る
Deep-level photoluminescence spectra of Cr-doped GaAsP alloys have been measured systematically over the whole composition range. It has been found that the Cr-related luminescence spectra of GaAs_<1-x>P_x:Cr alloys exhibit only a broad band without the well-known characteristic sharp zero-phonon line as in GaAs and GaP, and the peak position is nearly unchanged with respect to the alloy composition below the phosphorus composition of x〜0.65. Moreover the halfwidth of the Cr-related band is larger in GaAsP than in GaAs and GaP. Luminescence-excitation data indicate that the below-gap excitation is dominant in GaAsP alloys.
- 社団法人応用物理学会の論文
- 1984-01-20
著者
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HAMAKAWA Yoshihiro
Faculty of Engineering Science, Osaka University
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Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
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Kojima A
Gunma National Coll. Technol. Maebashi Jpn
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Kojima A
Quantum 14 Co. Ltd.
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Kojima Atsushi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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NISHINO Taneo
Faculty of Engineering Science, Osaka University
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Nishino Taneo
Faculty Of Engineering Kobe University
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Hamakawa Yoshihiro
Faculty Of Engineering Science Osaka University
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FUJIWARA Yasufumi
Faculty of Engineering Science, Osaka University
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KOJIMA Atsushi
Faculty of Engineering Science, Osaka University
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
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Fujiwara Y
Univ. Tokyo Tokyo
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