A 200V CMOS SOI IC with Field-Plate Trench Isolation for EL Displays
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概要
- 論文の詳細を見る
EL (Electroluminescent) displays have been applied to automobiles, as their images are very clear and bright. High voltage, high integration and low power dissipation ICs are needed to drive these devices. To meet this, high voltage CMOS ICs using SOI (Silicon On Insulator) substrates are chosen as the driving devices. In this paper, an isolation structure between the output CMOS devices, of high density and high voltage is proposed. Conventional trench dielectric isolation shows degradation of a break down voltage with short distance from trench to source. In this work, the authors make clear the electric field distribution near the isolation, and offer a novel structure of "Fieldplate Trench Isolation, "which enables to relax the electric field on the silicon surface by shifting a part of electric field into surface oxide. Finally, operation of high voltage and high density, a 200-volt and 32-channel, EL display driver for automotive display panel is confirmed.
- 社団法人電子情報通信学会の論文
- 2001-02-01
著者
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Fujino S
Denso Corp. Aichi‐ken Jpn
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Fujino S
Electronics Device R&d Center Denso Corporation
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Shirakawa Isao
Department Of Information System Engineering Graduate School Of Engineering Osaka University
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Shirakawa Isao
Osaka University
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Fujino Seiji
Electronics Device R&d Center Denso Corporation
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Himi H
Denso Corporation
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Himi Hiroaki
Research Laboratories Nippondenso Co. Ltd.
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Shirakawa I
Graduate School Of Applied Informatics University Of Hyogo
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KAWAMOTO Kazunori
DENSO CORPORATION
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FUJINO Seiji
DENSO CORPORATION
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YAMAGUCHI Hitoshi
DENSO CORPORATION
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HIMI Hiroaki
DENSO CORPORATION
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Yamaguchi H
Nec Corp. Sagamihara‐shi Jpn
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Higuchi Y
Electronics Device R&d Center Denso Corporation
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Higuchi Yasushi
Electronics Device R&d Center Denso Corporation
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Kawamoto K
Electronics Device R&d Center Denso Corporation
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