Analysis of Self-Heating in SOI High Voltage MOS Transistor (Special Issue on SOI Devices and Their Process Technologies)

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概要

• 論文の詳細を見る

• This paper describes an analytic method, experimental results and simulation results for self-heating in a SOI (Silicon On Insulator) high voltage MOS transistor. The new analytic method enabled the temperature-rise caused by self-heating to be measured precisely. The temperature-rise in an operating transistor was evaluated by measuring the change of the source current against the source current without the self-heating. In advance, the relation between the temperature-rise and the current change had been prepared by measuring the current decrease when the hot-chuck temperature had been changed in iso-thermal condition. By using this method, the dependence of the temperature-rise or the current decrease on the operating condition or the thermal resistance were clarified. Furthermore, these measurement results and the thermal resistance which is calculated by a FEM analysis enabled a fully coupled electrothermal device simulation to be analyzed more precisely. The dependence of the current decrease on the buried oxide thickness were also calculated.

• 社団法人電子情報通信学会の論文
• 1997-03-25

著者

• YAMAGUCHI Hitoshi

  Research Laboratories, Nippondenso Cooperation., Ltd.

• HIMI Hiroaki

  Research Laboratories, Nippondenso Co., Ltd.

• Himi H

  Denso Corporation

• Himi Hiroaki

  Research Laboratories Nippondenso Co. Ltd.

• YAMAGUCHI Hitoshi

  DENSO CORPORATION

• Yamaguchi H

  Nec Corp. Sagamihara‐shi Jpn

• AKITA Shigeyuki

  Research Laboratories, DENSO CORPORATION

• MORISHITA Toshiyuki

  Research Laboratories, Denso Corporation

• Akita Shigeyuki

  Research Laboratories Denso Corporation

• Morishita Toshiyuki

  Research Laboratories Denso Corporation

• Higuchi Y

  Electronics Device R&d Center Denso Corporation

• Higuchi Yasushi

  Electronics Device R&d Center Denso Corporation

関連論文

• Superjunction by Wafer Direct Bonding
• Silicon Wafer Direct Bonding without Hydrophilic Native Oxides
• A 25kV ESD Proof LDMOSFET with a Turn-on Discharge MOSFET
• A Single Chip Automotive Control LSI Using SOI Bipolar Complimentary MOS Double-Diffused MOS
• A 200V CMOS SOI IC with Field-Plate Trench Isolation for EL Displays
• A Single Chip Automotive Control LSI Using SOI BiCDMOS
• Intelligent Power IC with Partial SOI Structure
• 200 V Rating CMOS Transistor Structure with Intrinsic SOI Substrate
• Analysis of Self-Heating in SOI High Voltage MOS Transistor (Special Issue on SOI Devices and Their Process Technologies)
• Development of time-to-digital converter IC for laser radar
• A CMOS Time-to-Digital Converter LSI with Half-Nanosecond Resolution Using a Ring Gate Delay Line (Special Issue on ASICs for Automotive Electronics)
• A Single Chip Automotive Control LSI Using SOI Bipolar Complimentary MOS Double-Diffused MOS

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