Growth of ZnS by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
ZnS epilayers are grown on GaP and GaAs substrates by a low pressure metalorganic chemical vapor deposition technique using dietylzinc (DEZ) or dimethylzinc (DMZ) and H_2S as source materials. Good epitaxial layers of ZnS are grown at a substrate temperature T_G of 370 to 400℃ at a flow rate ratio, [H_2S]/[DEZ] or [DMZ]≃3.0. A typical growth rate of ZnS layers at T_G=375℃ is 〜4 μm/hr for the DEZ/H_2S system and 〜3 μm/hr for the DMZ/H_2S system.
- 社団法人応用物理学会の論文
- 1983-09-20
著者
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Sasaki Akio
Department Of Electrical Engineering Kyoto University
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Tomomura Yoshitaka
Department Of Electrical Engineering Kyoto University
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