Al_xGa_<1-x>As Heterojunction Phototransistors Responding to Entire Visible Wavelength Region
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-08-15
著者
-
Takeda Yoshikazu
Department Of Electrical Engineering Kyoto University:(present Address) Department Of Materials Nago
-
Takeda Yoshikazu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
-
Takeda Y
Department Of Chemistry Faculty Of Engineering Mie University
-
Takeda Y
Nagoya Univ. Nagoya Jpn
-
Sasaki A
Shizuoka Univ. Hamamatsu Jpn
-
SASAKI Akio
Department of Electrical Engineering, Kyoto University
-
Zhu Yu
Department of Pharmacy, Changhai Hospital, the Second Military Medical University
-
Zhu Yu
Department Of Electrical Engineering Kyoto University:(present Address) Central Research Labortories
-
Zhu Yu
Department Of Communication Science And Engineering Fudan University
-
Takeda Yasuo
Department Of Chemistry Faculty Of Engineering Mie Univerisity
-
NODA Susumu
Department of Electrical Engineering, Kyoto University
-
Noda Susumu
Department Of Electrical Engineering Kyoto University
-
Sasaki Akio
Department Of Electrical Engineering Kyoto University
-
Zhu Yu
Department Of Chemistry University Of Science And Technology Of China
-
Noda Susumu
Department of Electric Science and Engineering, Kyoto University
関連論文
- Super-High Brightness and High-Spin-Polarization Photocathode
- Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy
- Effect of Ln-Site Disorder on T_c of Oxypnictide Superconductor LnFeAsO_F_x (Ln = Nd, Ce-Gd, and La-Dy)
- Nanoscale ErP Islands on InP(001) Substrate Grown by Organometallic Vapor-Phase Epitaxy
- Thermal Quenching of Er-Related Luminescence in GaInP Doped with Er by Organometallic Vapor Phase Epitaxy
- Formation of ErP Islands on InP(001) Surface by Organometallic Vapor Phase Epitaxy
- Effects of Growth Temperature on Er-Related Photoluminescence in Er-Doped InP and GaAs Grown by Organometallic Vapor Phase Epitaxy with Tertiarybutylphosphine and Tertiarybutylarsine
- Droplet Hetero-Epitaxy of InAs Quantum Structures on InP Nanopyramids Formed by Selective-Area Flow Rate Modulation Epitaxy
- Fabrication of InP Submicron Pillars for Two-Dimensional Photonic Crystals by Reactive Ion Etching
- Fabrication of Two-Dimensional InP Photonic Band-Gap Crystals by Reactive Ion Etching with Inductively Coupled Plasma
- Shearing Interferometry for at Wavelength Wavefront Measurement of Extreme-Ultraviolet Lithography Projection Optics
- Effects of GaP Cap Layer Growth on Self-Assembled InAs Islands Grown on GaP(001) by Organometallic Vapor Phase Epitaxy
- Optically Detected Far-Infrared Magnetoabsorption in InGaAs
- Nanometer-Scale Layer Removal of Aluminum and Polystyrene Surfaces by Ultrasonic Scratching ( Scanning Tunneling Microscopy)
- Cd-Doping in In_xGa_As_yP_ Mixed Semiconductors Grown by Liquid-Phase Epitaxy
- Participation of Proteinase-Activated Receptor-2 in Passive Cutaneous Anaphylaxis-Induced Scratching Behavior and the Inhibitory Effect of Tacrolimus
- Structural Characterization of AlP/GaP Disordered Superlattice by Dynamical Simulation of X-Ray Diffraction
- Characteristics of Gaseous and Liquid Fuel Combustion in Laboratory-scale Furnaces
- Green Photoluminescence from GaInN Photonic Crystals
- Superconducting Transition of GdBa_2Cu_3O_
- Complex Susceptibility of YBa_2Cu_3O_
- Complex Susceptibility of La_Sr_CuO_
- High Power and High Resolution Near-Infrared Light Source for Optical Coherence Tomography Using Glass Phosphor and Light Emitting Diode
- Wideband infrared emission from Yb[3+] and Nd[3+]-doped Bi2O3-B2O3 glass phosphor for an optical coherence tomography light source
- Electroluminescence of AlAs/GaAs Disordered Superlattices
- Photoluminescent Properties of AlAs/Al_xGa_As (x=0.5) Disordered Superlattices
- Absorption Spectra and Photoluminescent Processes of AlAs/GaAs Disordered Superlattices
- Proposal and Experimental Results of Disordered Crystalline Semiconductors
- Al_xGa_As Heterojunction Phototransistors Responding to Entire Visible Wavelength Region
- OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source
- Characterization of InP Grown by OMVPE Using Tertiary-butylphosphine for the Phosphorous Source
- Determination of Al Composition and DLTS Measurements of Al_xGa_Sb on GaSb Substrate
- Relay Selection in Amplify-and-Forward Systems with Partial Channel Information
- Scanning Shearing-Stress Microscopy of Gold Thin Films
- Semilinear Self-Pumped Phase-Conjugate Mirror Using Two Couplcd Cu : (K_Na_)_(Sr_Ba_)_Nb_2O_6 Crystals
- Generation of Forward Phase-Conjugate Beam by Cu : KNSBN-Cat Type Self-Pumped Phase-Conjugator
- New Realization Method for Three-Dimensional Photonic Crystal in the Optical Wavelength Region: Experimental Consideration
- New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region : Experimental Consideration
- New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region
- Plasma-Deposited Silicon Nitride Films from SiF_2 as Silicon Source
- Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride
- The High-T_c Phase with a New Modulation Mode in the Bi, Pb-Sr-Ca-Cu-O System : Electrical Properties of Condensed Matter
- Bond Length Relaxation in Ultrathin InAs and InP_As_ Layers on InP(001)
- Minor Actinides Incineration by Loading Moderated Targets in Fast Reactor
- Real Time Magnetic Imaging by Spin-Polarized Low Energy Electron Microscopy with Highly Spin-Polarized and High Brightness Electron Gun
- Hall Mobility and Hall Factor of In_Ga_As
- Growth Temperature Dependence of Electrical Properties of LPE-Al_Ga_Sb Characterized by p-n Junction Current Transport
- Direct Fabrication of Photonic Crystal on Glass Substrate by Nanoimprint Lithography
- Optical and Electrical Characteristics of Organic Light-Emitting Diodes with Two-Dimensional Photonic Crystals in Organic/Electrode Layers
- Double-Grating Lateral Shearing Interferometer for Extreme Ultraviolet Lithography
- Single-Crystal Growth of (LaSmSr)_2CuO_4
- Observation of Electric Fields at Surface and Interface of Doped GaAs/Semi-insulating GaAs Structures by Fast Fourier Transformed Photoreflectance
- AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and their Photoluminescence Properties : Semiconductors and Semiconductor Devices
- Predicted Extremely High Mobilities of Two-Dimensional Electrons in AlGaSb/GaSb and AlInAsSb/InAs Single Heterostructures
- Incorporation Process of the As Atom on the InP(001) Surface Studied by Extended X-Ray Absorption Fine Structure
- Application of High Pressure and High Oxygen : Pressure to Copper Oxides : I-A New Materials and Material Design : I. Oxide Superconductors, Experiments I : Material Syntheses and Crystal Structures
- Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic Source : Condensed Matter
- Microdomain Structure in YBa_2(Cu_Fe_x)_3O_ Observed by Electron Microscopy : Electrical Properties of Condensed Matter
- Coherent Intergrowth Structure of Tetragonal and Orthorhombic Ba_2YCu_3O_ Observed by Transmission Electron Microscopy : Condensed Matter
- Electrical and Optical Properties of Ag/p-InP/p-InGaAs Schottky Photodiodes
- Fabrication of 1-μm Wavelength Region Ag/p-InP/p-InGaAs Schottky Photodiodes by LPE and Selective Etching
- Electron Spin Resonance Study of Low-Dimensional Magnetic Properties of MnF_2-CaF_2 Superlattices : Magnetism
- Electron Mobility Calculations of In_Ga_As Taking the Two-Mode Lattice vibrations into Account
- Thermal Stability of GaAs/InAs/GaAs Heterostructure Studied by X-Ray Crystal Truncation Rod Scattering Measurement
- 2P293 Formation of domains in fluorescent lipids doped DMPC-DOPC binary bilayers supported on SiO_2/Si substrates under local light irradiation.(40. Membrane structure,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Calculated Electron Mobility of Two-Dimensional Electrons in AIInAs/InGaAs and InP/InGaAs Single Heterostructures
- Influence of Long-Range Lateral Ordering in Structures with Quantum Dots on the Spatial Distribution of Diffracted X-Ray Radiation
- Enhancement of Absorption Magnitude of Short-Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells
- Near-infrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
- Nearinfrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
- Photoluminescence and Photoluminescence Excitation Spectra of AlAs/GaAs Disordered Superlattices with Various Disordered Lengths
- Analysis of Waveguides and Waveguide Bends in Photonic Crystal Slabs with Triangular Lattice
- Design for Waveguides in Three-Dimensional Photonic Crystals
- Wafer Fusion Technique Applied to GaN/GaN System
- Development of One Period of a Three-Dimensional Photonic Crystal in the 5-0μm Wavelength Region by Wafer Fusion and Laser Beam Diffraction Pattern Observation Techniques
- Fabrication and Optical Properties of One Period of a Three-Dimensional Photonic Crystal Operating in the 5-10 μm Wavelength Region
- GaP, AlGaAs/GaAs, AlGaAsSb/GaSb Photovoltaic Devices and Characteristics : II-1: COMPOUND SOLAR CELLS
- Wafer Fusion Condition for GaAs/AlGaAs System and Its Application to Laser Diode : Instrumentation, Measurement, and Fabrication Technology
- Photonic Crystal Lasers
- Linearly-Polarized Single-Lobed Beam in a Surface-Emitting Photonic-Crystal Laser
- Low NO_x Combustion by a Cyclone-Jet Combustor
- On-the-Fly Wavelength Conversion of Photons by Dynamic Control of Photonic Waveguides
- One-Dimensional PbS/Polymer Nanocomposite of Core/Sheath Structure Fabricated by Hydrothermal Polymerization and Simultaneous Sulfidation
- Room-Temperature 1.54μm Light Emission from Er,O-Codoped GaAs/GaInP Light-Emitting Diodes Grown by Low-Pressure Organometallic Vapor Phase Epitaxy
- Monolithic Integrated Device for Light Amplification : B-3: NOVEL DEVICES
- Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor
- Average Bond Lengths and Atom Arrangement in In_Ga_xAs and GaAs_P_x III-V Ternary Alloy Semiconductors
- Alloy Scattering Mobility in III-V Ternary Alloy Semiconductors with Nonrandom Atom Arrangerment
- Optical Flip-Flop and Astable Multivibrator Functions by Vertical and Direct Integration of Heterojunction Phototransistors and Laser Diodes
- Antidepressant properties of bioactive fractions from the extract of Crocus sativus L.
- Free Energies and Equilibrium States of Mono- and Bi-Layer Superstructures of III-V Ternary Alloy Semiconductors
- Synthesis, Crystal Structure, and Optical Limiting Effect of a Cu(I) Coordination Polymeric Cluster Bridged by Chiral-carbon Skeleton Bipyridyl Ligand
- Properties of Zn-Doped P-Type In_Ga_As on InP Substrate
- High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes
- Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
- Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method
- Wideband Infrared Emission from Yb3+- and Nd3+-Doped Bi2O3–B2O3 Glass Phosphor for an Optical Coherence Tomography Light Source
- Mean Transverse Energy Measurement of Negative Electron Affinity GaAs-Based Photocathode
- Room-Temperature 1.54 μm Light Emission from Er,O-Codoped GaAs/GaInP Light-Emitting Diodes Grown by Low-Pressure Organometallic Vapor Phase Epitaxy
- Thermal Quenching of Er-Related Luminescence in GaInP Doped with Er by Organometallic Vapor Phase Epitaxy