Room-Temperature 1.54 μm Light Emission from Er,O-Codoped GaAs/GaInP Light-Emitting Diodes Grown by Low-Pressure Organometallic Vapor Phase Epitaxy
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概要
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We report on room-temperature 1.54 μm electroluminescence, for the first time, of Er,O-codoped GaAs/GaInP double-heterostructure light emitting diodes grown by organometallic vapor phase epitaxy. The luminescence is due to intra-$4f$ shell transition from the first excited state to the ground state of Er3+ ions. The erbium and oxygen were uniformly doped in the GaAs active layer with a concentration of $8 \times 10^{18}$ cm-3. Emission lines in the spectrum indicated successful formation of the Er-2O center and a preferential excitation of the center by current injection. The intensity of the main line observed at 1.538 μm increased linearly with current density and exhibited a tendency to saturate at a current density higher than 20 A/cm2.
- 2003-04-15
著者
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Takeda Yoshikazu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Inoue Kentaro
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Koizumi Atsushi
Department Of Agricultural And Biological Chemistry Nihon University
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Urakami Akira
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Fujiwara Yasufumi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Yoshikane Taketoshi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Fujiwara Yasufumi
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Koizumi Atsushi
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Yoshikane Taketoshi
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Urakami Akira
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Takeda Yoshikazu
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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