Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSe
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概要
- 論文の詳細を見る
The growth rate of ZnSe in organometallic vapor-phase epitaxy (OMVPE) using dimethylzinc (DMZ) and dimethylselenide (DMSe) as the source materials was substantially increased by irradiation from a xenon lamp. The growth temperature was reduced from 500℃ to 300℃ by keeping a constant growth rate of 1〜2 μm/h. Promotion of surface reaction due to irradiation was considered as one of the factors for the growth rate enhancement. The density of defects which causes deep level emissions was also successfully reduced. We suggest that this technique is very effective to obtain high-quality epilayers.
- 社団法人応用物理学会の論文
- 1987-12-20
著者
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Sakamoto Takao
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Sakamoto Takao
Department Of Electrical Engineering Kyoto University
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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Tanabe Akira
Department Of Electrical Engineering Kyoto University
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ISEMURA Masashi
Department of Electrical Engineering, Kyoto University
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Isemura Masashi
Department Of Electrical Engineering Kyoto University
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