$\beta$-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
$\beta$-Al2xGa2-2xO3 alloy thin films were successfully grown on (100)-oriented $\beta$-Ga2O3 single-crystal substrates by plasma-assisted molecular beam epitaxy. The films were grown almost coherently and maintained the $\beta$-phase up to an Al content of $x=0.61$. Below an Al content of about $x=0.4$, step-flow growth was achieved, and carrier accumulation was observed at the heterointerface. These results encourage further research into $\beta$-Al2xGa2-2xO3 thin films and associated devices, especially high-electron-mobility transistors for high-power applications.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-07-25
著者
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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Okuno Takeya
Department Of Electronic Science And Engineering Kyoto University
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Oshima Takayoshi
Department Of Electronic Science And Engineering Kyoto University
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Kobayashi Yasushi
Nippon Light Metal Co., Ltd., Kambara, Shimizu-ku, Shizuoka 421-3291, Japan
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Arai Naoki
Nippon Light Metal Co., Ltd., Kambara, Shimizu-ku, Shizuoka 421-3291, Japan
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Okuno Takeya
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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Oshima Takayoshi
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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Oshima Takayoshi
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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