Ga2O3 Thin Film Growth on $c$-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors
スポンサーリンク
概要
- 論文の詳細を見る
$(\bar{2}01)$-oriented $\beta$-Ga2O3 thin films were grown on $c$-plane sapphire substrates by plasma-assisted molecular beam epitaxy. In-plane X-ray diffraction measurements revealed the inclusion of $\alpha$-Ga2O3 and rotational domains. However, the film grown under the optimized growth conditions exhibited a sharp absorption edge at around 5.0 eV, which is in the deep-ultraviolet region. An ohmic-type metal–semiconductor–metal photodetector showed a high resistance of around 6 G$\Omega$ with a small dark current of 1.2 nA at the 10 V bias voltage. Under 254 nm light illumination and 10 V bias voltage, the photoresponsivity was 0.037 A/W, which corresponded to a quantum efficiency of 18%.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-11-15
著者
-
Fujita Shizuo
International Innovation Center Kyoto University
-
Okuno Takeya
Department Of Electronic Science And Engineering Kyoto University
-
Oshima Takayoshi
Department Of Electronic Science And Engineering Kyoto University
-
Oshima Takayoshi
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
関連論文
- Focused Ion Beam Patterning for Fabrication of Periodical Two-Dimensional Zinc Oxide Nanodot Arrays
- Self-Tailored One-Dimensional ZnO Nanodot Arrays Formed by Metalorganic Chemical Vapor Deposition
- Growth of ZnO Nanorods on A-Plane (1120) Sapphire by Metal- Organic Vapor Phase Epitaxy
- Self-Assembled Three-Dimensional ZnO Nanosize Islands on Si Substrates with SiO_2 Intermediate Layer by Metalorganic Chemical Vapor Deposition : Semiconductors
- Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering
- Blue Photoluminescence from ZnCdO Films Grown by Molecular Beam Epitaxy
- Growth of ZnO by Molecular Beam Epitaxy Using NO_2 as Oxygen Source
- MBE Growth of ZnO Using NO_2 as Oxygen Source
- Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on $\beta$-Ga2O3 Substrates
- Wet Etching of $\beta$-Ga2O3 Substrates
- Epitaxial Structures of Band-Gap-Engineered α-(Cr[x]Fex)O (0 x 1) Films Grown on C-Plane Sapphire (Special Issue : Applied Physics on Materials Research)
- Quantum Chemical Study on Interactions of Diethylzinc with Nitrous Oxide and Water for ZnO Growth by Metal–Organic Vapor Phase Epitaxy
- Self-Tailored One-Dimensional ZnO Nanodot Arrays Formed by Metalorganic Chemical Vapor Deposition
- Focused Ion Beam Patterning for Fabrication of Periodical Two-Dimensional Zinc Oxide Nanodot Arrays
- $\beta$-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy
- Flame Detection by a $\beta$-Ga2O3-Based Sensor
- Growth of Crystalline Zinc Oxide Thin Films by Fine-Channel-Mist Chemical Vapor Deposition
- Linear-Source Ultrasonic Spray Chemical Vapor Deposition Method for Fabrication of ZnMgO Films and Ultraviolet Photodetectors
- Low-Temperature Growth of ZnO Thin Films by Linear Source Ultrasonic Spray Chemical Vapor Deposition
- Erratum: "Linear Source Ultrasonic Spray Chemical Vapor Deposition Method for Fabrication of ZnMgO Films and Ultraviolet Photodetectors"
- Formation of Semi-Insulating Layers on Semiconducting \beta-Ga
- (111)-Oriented Zn3N2 Growth on $a$-Plane Sapphire Substrates by Molecular Beam Epitaxy
- Density Functional Theory Study on $\beta$-Hydride Elimination as Thermal Decomposition Process of Diethylzinc
- Growth Behavior of Nonpolar ZnO on $M$-plane and $R$-plane Sapphire by Metalorganic Vapor Phase Epitaxy
- \beta-Ga
- Formation of Semi-Insulating Layers on Semiconducting β-Ga₂O₃ Single Crystals by Thermal Oxidation
- Ga2O3 Thin Film Growth on $c$-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors
- Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite MgxZn1-xO Alloys ($x\simeq 0.5$) and Their Application to Solar-Blind Region Photodetectors