Growth Behavior of Nonpolar ZnO on $M$-plane and $R$-plane Sapphire by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
$M$-plane and $A$-plane ZnO films were grown on $M$-plane and $R$-plane sapphire substrates respectively. At high growth temperatures and/or VI/II ratios, ZnO grew along the direction perpendicular to the $c$-axis. On the other hand, at low growth temperatures and/or VI/II ratios, ZnO grew along the $c$-axis direction. A very smooth ZnO film was achieved on $R$-plane sapphire under a very low VI/II ratio condition. This was because the lateral growth was accelerated by a very strong tendency of growing along the $c$-axis. In contrast, on $M$-plane sapphire, $C$-plane ZnO nanorods tilted by 30° from the normal of the surface were formed under this growth condition.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-15
著者
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Fujita Shizuo
International Innovation Center Kyoto University
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Moriyama Takumi
Department Of Electronic Science And Engineering Kyoto University
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Moriyama Takumi
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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