(111)-Oriented Zn3N2 Growth on $a$-Plane Sapphire Substrates by Molecular Beam Epitaxy
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概要
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(111)-oriented Zn3N2 thin films were grown on $a$-plane ($11\bar{2}0$) sapphire substrates by plasma-assisted molecular beam epitaxy. Zn3N2/sapphire exhibits orientational relationships of out-of-plane $\langle 111\rangle\parallel[11\bar{2}0]$ and in-plane almost $\langle 1\bar{1}0\rangle\parallel[0001]$ and $\langle 10\bar{1}\rangle\parallel[0001]$. These specific orientations result from similar surface configurations of N atoms in Zn3N2 and Al atoms in sapphire at the interface. Under the optimum growth conditions, the film showed a full width at half maximum of 185 arcsec for an X-ray (222) diffraction rocking curve and a root-mean-square roughness of 8.5 Å in an atomic force microscope image. These results suggest that $a$-plane sapphire is a suitable heteroepitaxial substrate for high-quality Zn3N2 thin films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-11-15
著者
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Fujita Shizuo
International Innovation Center Kyoto University
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Oshima Takayoshi
Department Of Electronic Science And Engineering Kyoto University
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