Composition and Chemical Bonds in Silicon Nitride by SiH_4-N_2 Gas Mixture Plasma CVD
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概要
- 論文の詳細を見る
Plasma CVD silicon nitride films are produced from SiH_4-N_2 gas mixture with a constant flow ratio SiH_4/N_2=0.1. When the pressure decreases and the substrate temperature increases, the Si/N composition approaches the stoichiometric value 0.75. As compared with the film deposited from SiH_4-NH_3 reaction, the present ammonia-free silicon nitride contains little N-H bonds and less hydrogen, and can be expected to have higher atom concentration and tight bondings.
- 社団法人応用物理学会の論文
- 1983-02-20
著者
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Zhou Nan-sheng
Department Of Electrical Engineering Kyoto University
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Sasaki Akio
Department Of Electrical Engineering Kyoto University
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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