Liquid-Crystal Electrothermo-Optic Effects and Their Application to Display : B-3: DISLLAY DEVICES
スポンサーリンク
概要
著者
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Takagi Toshinori
Department Of Electronics Kyoto University
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Sasaki Akio
Department Of Electrical Engineering Kyoto University
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MORIOKA Takayuki
Department of Electronics, Kyoto University
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ISHIBASHI Toyotsugu
Department of Electronics, Kyoto University
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Ishibashi Toyotsugu
Department Of Electronics Kyoto University
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Ishibashi Toyotsugu
Department Of Electronic Science And Engineering Kyoto University
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Morioka Takayuki
Department Of Electronics Kyoto University
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Sasaki Akio
Department Of Electronics Kyoto University
関連論文
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- Structural Characterization of AlP/GaP Disordered Superlattice by Dynamical Simulation of X-Ray Diffraction
- Electroluminescence of AlAs/GaAs Disordered Superlattices
- Photoluminescent Properties of AlAs/Al_xGa_As (x=0.5) Disordered Superlattices
- Absorption Spectra and Photoluminescent Processes of AlAs/GaAs Disordered Superlattices
- Proposal and Experimental Results of Disordered Crystalline Semiconductors
- Al_xGa_As Heterojunction Phototransistors Responding to Entire Visible Wavelength Region
- OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source
- Characterization of InP Grown by OMVPE Using Tertiary-butylphosphine for the Phosphorous Source
- Determination of Al Composition and DLTS Measurements of Al_xGa_Sb on GaSb Substrate
- New Realization Method for Three-Dimensional Photonic Crystal in the Optical Wavelength Region: Experimental Consideration
- New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region : Experimental Consideration
- New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region
- Plasma-Deposited Silicon Nitride Films from SiF_2 as Silicon Source
- Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride
- Growth Temperature Dependence of Electrical Properties of LPE-Al_Ga_Sb Characterized by p-n Junction Current Transport
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- Effects of Nitrogen Incorporation on Gap-State Density in Chemically Vapor-Deposited Amorphous Silicon
- AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and their Photoluminescence Properties : Semiconductors and Semiconductor Devices
- Predicted Extremely High Mobilities of Two-Dimensional Electrons in AlGaSb/GaSb and AlInAsSb/InAs Single Heterostructures
- Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic Source : Condensed Matter
- Electrical and Optical Properties of Ag/p-InP/p-InGaAs Schottky Photodiodes
- Fabrication of 1-μm Wavelength Region Ag/p-InP/p-InGaAs Schottky Photodiodes by LPE and Selective Etching
- Calculated Electron Mobility of Two-Dimensional Electrons in AIInAs/InGaAs and InP/InGaAs Single Heterostructures
- Enhancement of Absorption Magnitude of Short-Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells
- Nearinfrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
- Photoluminescence and Photoluminescence Excitation Spectra of AlAs/GaAs Disordered Superlattices with Various Disordered Lengths
- GaP, AlGaAs/GaAs, AlGaAsSb/GaSb Photovoltaic Devices and Characteristics : II-1: COMPOUND SOLAR CELLS
- Monolithic Integrated Device for Light Amplification : B-3: NOVEL DEVICES
- Plasma Electron Energy Distribution of a Beam-Plasma Type Ion Source
- Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor
- Average Bond Lengths and Atom Arrangement in In_Ga_xAs and GaAs_P_x III-V Ternary Alloy Semiconductors
- Alloy Scattering Mobility in III-V Ternary Alloy Semiconductors with Nonrandom Atom Arrangerment
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- Free Energies and Equilibrium States of Mono- and Bi-Layer Superstructures of III-V Ternary Alloy Semiconductors
- Solution Hardening due to a Nonrandom Atom Arrangement in III-V Ternary Alloy Semiconductors : Mechanical and Acoustical Properties
- Bond Lengths in III-V Ternary Alloy Semiconductors
- Effects of Magnetic Field on Electron Transfer and Velocity-Field Characteristic in Gallium Arsenide
- Growth of ZnS by Metalorganic Chemical Vapor Deposition
- Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPE
- Atom Arrangement in III-V Quaternary Alloy Semiconductors of (ABC)D Type : Semiconductors and Semiconductor Devices
- Average Lengths and Statistics of Bonds in In_Ga_xAs_P_y Quaternary Alloy Semiconductor : Semiconductors and Semiconductor Devices
- Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-Beams
- Beam-Plasma Type Metal Ion Source
- Film Growth of GaN on a c-Axis Oriented ZnO Film Using Reactive Ionized-Cluster Beam Technique and Its Application to Thin Film Devices : C-4: THIN FILM DEVICES
- Mn-Implanted ZnS Thin Film Electroluminescent Cell
- Liquid-Crystal Electrothermo-Optic Effects and Their Application to Display : B-3: DISLLAY DEVICES
- Properties of Zn-Doped P-Type In_Ga_As on InP Substrate
- Composition and Chemical Bonds in Silicon Nitride by SiH_4-N_2 Gas Mixture Plasma CVD
- Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
- Characterization of InP Air/Semiconductor Gratings Formed by Mass-Transport Assisted Wafer Fusion Technique and Its Application to Distributed Feedback Laser
- lnGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
- 2-D Simulation and New Structures of Heterojunction Phototransistor for Higher Optical Amplification in Optoelectronic Integrated Devices
- Enhancement of Absorption Magnitude of Short-Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells
- Near-infrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate