Atom Arrangement in III-V Quaternary Alloy Semiconductors of (ABC)D Type : Semiconductors and Semiconductor Devices
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概要
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The nonrandomness in atom arrangement has been estimated for III-V quaternary alloys of (ABC)D type through a thermodynamical analysis. As in ternary alloys, the strain energy is considered to be the mixing enthalpy. Calculations were carried out for (InGaAl)As and Ga(SbAsP), and the results are represented in terms of short-range order parameters of second-nearest pairs. The number of pairs increases compared with a random arrangement if composed of larger and smaller atoms than the average; however, the number of pairs of larger or smaller atoms decreases. When the lattice constant of a constituent binary compound coincides with that of an alloy, there appears in the alloy a preference for compound clustering. The results are compared with those for ternary alloys.
- 社団法人応用物理学会の論文
- 1988-04-20
著者
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Sasaki Akio
Department Of Electrical Engineering Kyoto University
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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