Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
スポンサーリンク
概要
- 論文の詳細を見る
Excess carrier lifetime in bulk 2-in. SiC wafers was measured by microwave photoconductivity decay ($\mu$-PCD). The mapping technique was used to obtain the lifetime distribution in the entire wafer. We observed the birefringence image and X-ray topograph of the wafers in order to determine the structural defect distribution, and the net donor concentration distribution was also observed by capacitance–voltage measurements. By comparison of lifetime maps with the structural defect distribution, it was found that relatively long lifetime regions correspond to regions with high-density structural defects. The net donor concentration did not show a clear influence on the carrier lifetimes. We confirmed that surface recombination has a negligible effect on the carrier lifetimes, and therefore the lifetimes obtained from mapping measurements are mainly dominated by carrier recombination behavior in the bulk of the wafers.
- 2005-12-15
著者
-
SUMIE Shingo
LEO Division, Kobelco Research Institute, Inc.
-
HASHIZUME Hidehisa
LEO Division, Kobelco Research Institute, Inc.
-
Mori Tatsuhiro
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
-
Arai Eisuke
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
-
Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
-
Watanabe Hideki
Departement Of Cardiology Kinu Medical Association Hospital
-
Kato Masashi
Department Of Applied Biological Chemistry Faculty Of Agriculture Meijo University
-
Kato Masashi
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, Japan
-
Mori Tatsuhiro
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, Japan
-
Sumie Shingo
LEO Division, Kobelco Research Institute, Inc., 1-5-5 Takatsukadai 1-chome, Nishi-ku, Kobe 651-2271, Japan
-
Watanabe Hideki
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, Japan
関連論文
- PJ-577 The targeting of cyclophilin D by RNA interference as a novel therapeutic strategy against myocardial ischemia/reperfusion injury(Acute coronary syndrome, basic/clinical(05)(IHD),Poster Session(Japanese),The 72nd Annual Scientific Meeting of the Ja
- PDZK1 is a potential target for 1q21-q22 amplification frequently detected in drug resistant ovarian cancer(Oncology 1)
- OJ-185 Effects of Cardioprotective Drugs on Mitochondrial Functions during Myocardial Ischemia/Reperfusion Revealed by Real-time Two-photon Imaging of Perfused Rat Hearts.(Myocardial ischemia / reperfusion, basic / clinical(02)(IHD),Oral Presentation (Jap
- PJ-125 Targeting Cyclophilin D by RNA Interference Inhibits Oxidant-Induced Mitochondrial Death Pathway in Cardiac Myocytes(Myocardial ischemia/reperfusion, basic/clinical-3, The 71st Annual Scientific Meeting of the Japanese Circulation Society)
- Psychometric validation of the Japanese version of the International Consultation on Incontinence Questionnaire-Short Form
- Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
- Control of Surface Recombination of Si Wafers by an External Electrode
- A New Technique of Compound Semiconductor Deposition from a Aqueous Solution by Photochemical Reaction
- Differential Regulation of MMP-9 and TIMP-2 Expression in Malignant Melanoma Developed in Metallothionein/RET Transgenic Mice
- Annealing Study of the Electrochemically Deposited InS_xO_y Thin Film and Its Photovoltaic Application
- A Defect Model for Photoirradiated Semiconductors : Suppression of the Self-Compensation in II-VI Materials
- Loxoprofen sodium treatment for elderly men with refractory nocturia : Effect on night-time urine production
- Efficacy and Rebound Phenomenon Related To Intermittent Nitroglycerin Therapy for the Prevention of Nitrate Tolerance
- Preventive Effects of Angiotensin-Converting Enzyme Inhibitors on Nitrate Tolerance During Continuous Transdermal Application of Nitroglycerin in Patients With Chronic Heart Failure
- 1060 PREVENTIVE EFFECT OF VITAMIN E ON NITRATE TOLERANCE
- Ferromagnetic Resonance in [NiFeCo/Cu/Co]-Multilayers
- Effect of Spin Fluctuations on Magnetic Properties and Thermal Expansion in Pseudobinary System Fe_xCo_1-xSi
- Themal Expansion in Weak Itinerant Ferromagnets Fe_xCo_Si (x=0.48 and 0.77)
- Amino acid substitutions in PKR-eIF2 phosphorylation homology domain (PePHD) of hepatitis C virus E2 protein in genotype 2a/2b and 1b in Japan and interferon efficacy
- Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Search for Midgap Levels in 3C-SiC Grown on Si Substrates
- Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC
- The 4G/5G polymorphism of the plasminogen activator inhibitor-1 gene is associated with severe preeclampsia
- Optical Characterization of GaSb-Based Ternary and Quaternary Alloys Grown by Liquid-Phase Epitaxy at Low Temperatures
- Photoluminescence Study of Al_xGa_Sb Grown by Liquid-Phase Epitaxy
- Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
- Panning of a Phage VH Library Using Nitrocellulose Membranes : Application to Selection of a Human VH Library
- Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality
- Characterization of Thin Bonded Silicon-on-Insulator Structures by the Microwave Photocomductivity Decay Method
- AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and their Photoluminescence Properties : Semiconductors and Semiconductor Devices
- Predicted Extremely High Mobilities of Two-Dimensional Electrons in AlGaSb/GaSb and AlInAsSb/InAs Single Heterostructures
- Schedule-dependent cytotoxicity of 5-fluorouracil and irinotecan in a colon cancer cell line
- Midtrimester termination of pregnancy using gemeprost in combination with laminaria in women who have previously undergone cesarean section
- Association analysis of nine missense polymorphisms in the coagulation factor V gene with severe preeclampsia in pregnant Japanese women
- Brain Natriuretic Peptide (BNP) and Cyclic Guanosine Monophosphate (cGMP) Levels in Normal Pregnancy and Preeclampsia
- IS093 Losartan Improves Endothelium-dependent Vasodilation in Patients With Non-insulin Dependent Diabetes Mellitus
- Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
- Sacrificial Anodic Oxidation of 6H-SiC : Semiconductors
- Effects of PPAR Ligands on Insulin Resistance and Exercise Tolerance in Patients with Coronary Artery Disease and Metabolic Syndrome(Diabetes/Obesity 5 (H), The 69th Annual Scientific Meeting of the Japanese Circulation Society)
- OE-170 Effects of Telmisartan on Endothelial Function and Aortic Stiffness in Morning Hypertensive Patients with Metabolic Syndrome and Obstructive Sleep Apnea(Hypertension, clinical-02, The 71st Annual Scientific Meeting of the Japanese Circulation Socie
- Calculation of Bond Lengths in Si_Ge_x Alloys Based on the Valence-Force-Field Model
- Transurethral Radiofrequency Thermotherapy (TURF) for Benign Prostatic Hypertrophy with Thermex II
- Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
- Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator
- Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor
- Average Bond Lengths and Atom Arrangement in In_Ga_xAs and GaAs_P_x III-V Ternary Alloy Semiconductors
- Alloy Scattering Mobility in III-V Ternary Alloy Semiconductors with Nonrandom Atom Arrangerment
- Helical Spin Resonance and Magntization Measurement in Itinerant Helimagnet Fe_xCo_Si(0.3≦x≦0.85)
- Evidence for an association between plasma platelet-activating factor acetylhydrolase deficiency and increased risk of childhood atopic asthma
- Electrochemical Deposition of ZnO1-xSx Thin Films Using Three-Step Pulse
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
- Wide Bandgap InS-based Thin Film: Deposition, Characterization, and Application for SnS Solar Cells
- Electrodeposited ZnO/SnS Heterostructures for Solar Cell Application
- Effects of PPAR-γ Ligands, Pioglitazone, on Endothelial Function and Nitrate Tolerance in Type 2 Diabetics with Stable Angina(Angina Pectoris, Basic/Clinical 5 (IHD), The 69th Annual Scientific Meeting of the Japanese Circulation Society)
- Effects of Spironolactone on Endothelial Function in Patients with Chronic Heart Failure Treated with Angiotensin II Receptor Blocker (ARB)(Heart Failure, Clinical 14 (M), The 69th Annual Scientific Meeting of the Japanese Circulation Society)
- OE-036 Effects of Metformin on Endothelial Function, Aortic Stiffness, and Exercise Tolerance in Diabetic Patients with Stable Angina(Angina Pectoris, Basic and Clinical (IHD) : OE5)(Oral Presentation (English))
- FRS-121 Effects of Pioglitazone on Endothelial Function and Aortic Stiffness in Patients with Type 2 Diabetes Mellitus(Metabolic Syndrome (H) : FRS15)(Featured Research Session (English))
- Effects of valsartan on endothelial function and aortic stiffness in patients with essential hypertension
- Effects of antioxidants on endothelial function, aortic stiffness, and exercise tolerance in diabetic patients with stable angina
- Effects of lipid-lowering therapy with atorvastatin on endothelial function and aortic stiffness in patients with hypercholesterolemia
- Electric Field Gradient in Co_M_xSi (M=Fe,Ni)
- Retarded Diffusion of Phosphorus in Silicon-on-Insulator Structures
- Photochemical Deposition of GaSxOy Thin Films from Aqueous Solutions
- N-Acetyl-D-Galactosamine-Specific Hemagglutinin Purified from Seminal Plasma of the Sea Urchin, Hemicentrotus pulcherrimus(Biochemistry)
- Free Energies and Equilibrium States of Mono- and Bi-Layer Superstructures of III-V Ternary Alloy Semiconductors
- Solution Hardening due to a Nonrandom Atom Arrangement in III-V Ternary Alloy Semiconductors : Mechanical and Acoustical Properties
- Bond Lengths in III-V Ternary Alloy Semiconductors
- Photochemical Deposition of Patterned Gold Thin Films
- Atom Arrangement in III-V Quaternary Alloy Semiconductors of (ABC)D Type : Semiconductors and Semiconductor Devices
- Average Lengths and Statistics of Bonds in In_Ga_xAs_P_y Quaternary Alloy Semiconductor : Semiconductors and Semiconductor Devices
- Native Defects in III-V Ternary Alloy Semiconductors Grown from Liquid-Solutions
- Application and utility of computed tomography-guided needle biopsy with musculoskeletal lesions
- Helical Spin Resonance in the Cubic B-20 Fe_Co_Si Single Crystal with a Long-Period Helical Spin Structure
- Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO2 Films Prepared by Photochemical Techniques
- As and Sb Diffusion Profiles in Thin Silicon-On-Insulator Wafers
- Observation of Inhomogeneity of Schottky Barrier Height on 4H–SiC Using the Electrochemical Deposition
- Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method
- Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
- Improvement of Electrochemically Deposited Cu2O/ZnO Heterojunction Solar Cells by Modulation of Deposition Current
- Fabrication of Electrodeposited SnS/SnO2 Heterojunction Solar Cells
- Prediction of the Band Offsets at the CdS/Cu2ZnSnS4 Interface Based on the First-Principles Calculation
- Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers
- Electrodeposition of SnO2 Thin Films from Aqueous Tin Sulfate Solutions
- Electrical and Optical Properties of CdS Films Grown by Photochemical Deposition From Aqueous Solutions
- Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on First-Principle Calculation
- Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- All semiconductor low-Δ photonic crystal waveguide for semiconductor optical amplifier
- Electrochemical Deposition of GaSxOy Thin Films
- Deposition of Cd1-xZnxS ($0 \le x \le 1$) Alloys by Photochemical Deposition
- Room-Temperature Hydrogen Sensing Properties of SnO2 Thin Films Fabricated by the Photochemical Deposition and Doping Methods
- Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts
- Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source
- Deposition of SnSxOy Films by Electrochemical Deposition Using Three-Step Pulse and Their Characterization
- The conversion of methanol into hydrocarbons over dodecatungstophosphoric acid.
- Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator
- Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness
- Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation