Retarded Diffusion of Phosphorus in Silicon-on-Insulator Structures
スポンサーリンク
概要
- 論文の詳細を見る
Phosphorus diffusion profiles in bonding silicon-on-insulator(SOI)structures are compared with those in bulk Si. Phosphorus diffusion is carried out at 900 and 1000°C, using a spin-on-glass source which enables achievement of a high surface concentration near solid solubility. The diffusion methods consist of both predeposition diffusion in N_2 ambient and drive-in diffusion in N_2 or O_2 ambients following a short time predeposition. Results show that predeposition diffusion in the SOI structures is retarded at 900°C as compared with that in bulk Si, while it is not at 1000°C. The diffusion retardation appears more clearly for the SOI structure with a thinner active layer and longer diffusion time. In the drive-in diffusion at 900°C, retardation occurs in O_2 ambient, but not in N_2 ambient. These results are explained by considering the extinction of excess interstitial Si at the Si/SiO_2 interface in the SOI structure.
- 社団法人応用物理学会の論文
- 2000-02-15
著者
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Ichimura Masaya
Center For Cooperative Research Nagoya Institute Of Technology
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Uchida Hideo
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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IEKI Yasushi
Department of Electrical ad Computer Engineering, Nagoya Institute of Technology
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Ichimura Masaya
Center Of Cooperative Research Nagoya Institute Of Technology
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Uchida Hideo
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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Arai Eisuke
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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Ieki Yasushi
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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Ieki Yasushi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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