Prediction of the Band Offsets at the CdS/Cu2ZnSnS4 Interface Based on the First-Principles Calculation
スポンサーリンク
概要
- 論文の詳細を見る
The valance band offset \Delta E_{\text{v}} for the CdS/Cu2ZnSnS4 heterojunction is obtained on the basis of the first-principles pseudopotential method. Cu2ZnSnS4 is considered to crystallize in the kesterite structure. The total density of states and the local density of states for each atoms are calculated for the CdS(001)/Cu2ZnSnS4(001) supercell. There are two inequivalent interfaces between CdS and Cu2ZnSnS4 in the supercell, and different values of \Delta E_{\text{v}} are obtained for them, i.e., \Delta E_{\text{v1}} = 1.1 eV and \Delta E_{\text{v2}} = 1.6 eV. The corresponding conduction band offsets \Delta E_{\text{c}} are \Delta E_{\text{c1}} = 0.2 eV and \Delta E_{\text{c2}} = 0.7 eV with the conduction band minimum of Cu2ZnSnS4 higher than that of CdS.
- 2012-10-25
著者
-
Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
-
Bao Wujisiguleng
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya 466-8555, Japan
関連論文
- Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
- Annealing Study of the Electrochemically Deposited InS_xO_y Thin Film and Its Photovoltaic Application
- A Defect Model for Photoirradiated Semiconductors : Suppression of the Self-Compensation in II-VI Materials
- Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Optical Characterization of GaSb-Based Ternary and Quaternary Alloys Grown by Liquid-Phase Epitaxy at Low Temperatures
- Photoluminescence Study of Al_xGa_Sb Grown by Liquid-Phase Epitaxy
- Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
- Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality
- AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and their Photoluminescence Properties : Semiconductors and Semiconductor Devices
- Predicted Extremely High Mobilities of Two-Dimensional Electrons in AlGaSb/GaSb and AlInAsSb/InAs Single Heterostructures
- Sacrificial Anodic Oxidation of 6H-SiC : Semiconductors
- Calculation of Bond Lengths in Si_Ge_x Alloys Based on the Valence-Force-Field Model
- Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
- Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator
- Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor
- Average Bond Lengths and Atom Arrangement in In_Ga_xAs and GaAs_P_x III-V Ternary Alloy Semiconductors
- Alloy Scattering Mobility in III-V Ternary Alloy Semiconductors with Nonrandom Atom Arrangerment
- Electrochemical Deposition of ZnO1-xSx Thin Films Using Three-Step Pulse
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
- Wide Bandgap InS-based Thin Film: Deposition, Characterization, and Application for SnS Solar Cells
- Electrodeposited ZnO/SnS Heterostructures for Solar Cell Application
- Photochemical Deposition of GaSxOy Thin Films from Aqueous Solutions
- Free Energies and Equilibrium States of Mono- and Bi-Layer Superstructures of III-V Ternary Alloy Semiconductors
- Solution Hardening due to a Nonrandom Atom Arrangement in III-V Ternary Alloy Semiconductors : Mechanical and Acoustical Properties
- Bond Lengths in III-V Ternary Alloy Semiconductors
- Photochemical Deposition of Patterned Gold Thin Films
- Atom Arrangement in III-V Quaternary Alloy Semiconductors of (ABC)D Type : Semiconductors and Semiconductor Devices
- Average Lengths and Statistics of Bonds in In_Ga_xAs_P_y Quaternary Alloy Semiconductor : Semiconductors and Semiconductor Devices
- Native Defects in III-V Ternary Alloy Semiconductors Grown from Liquid-Solutions
- Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO2 Films Prepared by Photochemical Techniques
- As and Sb Diffusion Profiles in Thin Silicon-On-Insulator Wafers
- Observation of Inhomogeneity of Schottky Barrier Height on 4H–SiC Using the Electrochemical Deposition
- Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method
- Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
- Improvement of Electrochemically Deposited Cu2O/ZnO Heterojunction Solar Cells by Modulation of Deposition Current
- Fabrication of Electrodeposited SnS/SnO2 Heterojunction Solar Cells
- Prediction of the Band Offsets at the CdS/Cu2ZnSnS4 Interface Based on the First-Principles Calculation
- Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers
- Electrodeposition of SnO2 Thin Films from Aqueous Tin Sulfate Solutions
- Electrical and Optical Properties of CdS Films Grown by Photochemical Deposition From Aqueous Solutions
- Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on First-Principle Calculation
- Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Electrochemical Deposition of GaSxOy Thin Films
- Deposition of Cd1-xZnxS ($0 \le x \le 1$) Alloys by Photochemical Deposition
- Room-Temperature Hydrogen Sensing Properties of SnO2 Thin Films Fabricated by the Photochemical Deposition and Doping Methods
- Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts
- Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source
- Deposition of SnSxOy Films by Electrochemical Deposition Using Three-Step Pulse and Their Characterization
- Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator
- Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness
- Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation