Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation
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概要
- 論文の詳細を見る
We measured excess carrier lifetimes in as-grown and low-energy electron-irradiated p-type 4H-SiC epitaxial layers by the microwave photoconductivity decay method. The carrier lifetime increases with the excitation density in the epilayers. This dependence suggests that the dominant recombination center in the epilayers has a larger capture cross section for electrons than for holes. The low-energy electron irradiation reduces the carrier lifetime in the epilayers, and 1000 °C annealing increases the carrier lifetime in the electron-irradiated samples.
- The Japan Society of Applied Physicsの論文
- 2012-02-25
著者
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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Ohshima Takeshi
Japan Atomic Energy Agency
-
Kato Masashi
Department Of Applied Biological Chemistry Faculty Of Agriculture Meijo University
-
Hatayama Tomoaki
Graduate School of Engineering, Kyoto Univercity
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Hatayama Tomoaki
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan
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Matsushita Yoshinori
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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