Mechanisms of Reduction in Hole Concentration in Al-Implanted p-Type 6H-SiC by 1 MeV Electron Irradiation

概要

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The reduction in temperature-dependent hole concentration $ p(T)$ in Al-implanted p-type 6H-SiC by 1 MeV electron irradiation is investigated. By analysis of $ p(T)$, the density ($N_{\text{A}}$), level position ($E_{\text{A}}$) in the bandgap and nature of the acceptor are determined, and this acceptor is assigned to an Al acceptor. $E_{\text{A}}$ is independent of irradiation fluence ($\Phi$), while $N_{\text{A}}$ is strongly dependent on $\Phi$. We derived an analytical expression for the fluence dependence of $N_{\text{A}}$ and we estimated the removal coefficient (i.e., removal cross-section) of $N_{\text{A}}$ to be $6.4\times 10^{-18}$ cm2 for 1 MeV electron irradiation. The reduction in $ p(T)$ by electron irradiation is found to be mainly due to the decrease in $N_{\text{A}}$, not to the increase in the density of deep-level defects in the bandgap, because the decrement in $N_{\text{A}}$ is much larger than the increment in the density of deep-level defects.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-07-25