Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation

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概要

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• We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers.

• 2009-03-25

著者

• Itoh Hisayoshi

  Japan Atomic Energy Agency

• Tajima Michio

  Institute Of Space And Astronautical Scienc

• Hirose Kazuyuki

  Institute Of Space And Astronautical Science

• Ohshima Takeshi

  Japan Atomic Energy Agency

• Tajima Michio

  Institute of Space and Astronautical Science/Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 229-8510, Japan

• Nakagawa-Toyota Satoko

  Institute of Space and Astronautical Science/Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 229-8510, Japan

• Ohshima Takeshi

  Japan Atomic Energy Agency, Takasaki, Gunma 370-1292, Japan

• Hirose Kazuyuki

  Institute of Space and Astronautical Science/Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 229-8510, Japan

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