Bond Lengths in III-V Ternary Alloy Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
An analysis was applied to 18 different III-V ternary alloy semiconductors. A thermodynamical approach was taken in order to derive relative numbers or statistics of tetrahedron cells, and then the average bond lengths were theoretically calculated. To this extent, they would give us a basic idea of the microstructure of alloy semiconductors. The theoretical results of In_<1-x>Ga_xAs and GaAs_<1-x>P_x agree fairly well with experimental data from extended X-ray absorption fine structures.
- 社団法人応用物理学会の論文
- 1987-12-20
著者
-
Sasaki Akio
Department Of Electrical Engineering Kyoto University
-
Ichimura Masaya
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
-
Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
関連論文
- Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
- Cd-Doping in In_xGa_As_yP_ Mixed Semiconductors Grown by Liquid-Phase Epitaxy
- Structural Characterization of AlP/GaP Disordered Superlattice by Dynamical Simulation of X-Ray Diffraction
- Annealing Study of the Electrochemically Deposited InS_xO_y Thin Film and Its Photovoltaic Application
- A Defect Model for Photoirradiated Semiconductors : Suppression of the Self-Compensation in II-VI Materials
- Electroluminescence of AlAs/GaAs Disordered Superlattices
- Photoluminescent Properties of AlAs/Al_xGa_As (x=0.5) Disordered Superlattices
- Absorption Spectra and Photoluminescent Processes of AlAs/GaAs Disordered Superlattices
- Proposal and Experimental Results of Disordered Crystalline Semiconductors
- Al_xGa_As Heterojunction Phototransistors Responding to Entire Visible Wavelength Region