Near-infrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
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概要
- 論文の詳細を見る
We report intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate. The intersubband-transition wavelength and absorption coefficient are investigated as functions of sample structure and growth conditions. It is shown that a decrease in well width leads to a shorter transition wavelength but a reduction in the absorption coefficient. The reduction in the absorption coefficient can be recovered by increasing the In composition of the well and by suppressing the segregation of In during growth. With these optimizations, a very short intersubband-transition wavelength of 1.9 µm is achieved.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Abe Tomoki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University
-
Sasaki Akio
Department Of Electrical Engineering Kyoto University
-
Asano Takashi
Department Of Child Neurology Okayama University Medical School
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Abe Tomoki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
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Noda Susumu
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
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Noda Susumu
Department of Electric Science and Engineering, Kyoto University
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